Photon-induced switching and tunneling phenomena in a YBCO thin film junction

Abstract

In the persistent photoconductivity (PPC) phenomenon, illumination of a YBa 2 Cu 3 O 6.5 thin film junction with a 1mW He-Ne laser leads to the decrease of the critical voltage (similar to the threshold voltage). The decrease of the critical voltage was reversed by illumination with incandescent light. The critical voltage across the junction was experimentally decreased and increased by alternating illumination between He-Ne laser and incandescent light. We also observed visible quenching of the photo-induced state using a 5mW He-Ne laser. Finally, the threshold behavior of the junction was destroyed by illuminating it with incandescent light.