Photon-induced localization in optically absorbing materials

Mantese, L.; Bell, K.A.; Aspnes, D. E.; Rossów, U.

doi:10.1016/s0375-9601(98)00953-0

Cited by 16 publications

(15 citation statements)

References 16 publications

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“…The origin of the intrinsic features, however, is harder to explain. It has been discussed for a long time that these features are likely to be related to many-particle effects [5] and/or surface local fields (LF) [6,7], i.e., the influence of the surface-modified microscopic fluctuations of the electric field on the macroscopic dielectric response. However, no definite assignment has been possible yet.…”

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confidence: 99%

Bulk Excitonic Effects in Surface Optical Spectra

2001

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We calculate the surface optical properties of the passivated Si(110) surface using a real-space multigrid technique and ab initio pseudopotentials. Rather than from the usual eigenvalue representation, the macroscopic polarizability is obtained from the solution of an initial-value problem, which allows inclusion of excitonic and local-field effects in addition to the electronic self-energy in the surface calculations. It is shown that the electron-hole attraction is largely responsible for the peculiar line shape of the surface reflectance anisotropy.

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confidence: 99%

Bulk Excitonic Effects in Surface Optical Spectra

2001

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“…A dynamic photon-induced localization of the initial and final states over the range of the penetration depth of light of several hundred Angstroms was suggested to account for anisotropy signals close to the bulk critical point ͑CP͒ energies. 8 In Ref. 9 another long-range effect, the quenching of bulk-state wave functions near the surface, was made responsible for the appearance of peaks at bulk CP energies in the surface spectra.…”

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confidence: 99%

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)

et al. 2000

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A detailed analysis based on first-principles calculations with self-energy corrections is combined with photoemission spectroscopy to determine the origin of features observed in reflectance anisotropy spectroscopy ͑RAS͒ at semiconductor surfaces. Using the InP(001)(2ϫ4) surface as a model case we obtain quantitative agreement between slab calculations and low-temperature RAS measurements. We find the contributions to the anisotropy signal related either directly to surface states or to transitions between surface perturbed bulk wave functions. Our results demonstrate the high sensitivity of RAS to the surface structure and chemistry and show that the absorption processes causing the anisotropy signal take place in the uppermost few atomic layers of the substrate. RAPID COMMUNICATIONS R16 336PRB 61 W. G. SCHMIDT et al. RAPID COMMUNICATIONS R16 338PRB 61 W. G. SCHMIDT et al.

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“…Although exact expressions for the LF contributions to the surface optical response have been derived decades ago 19,31 , the complexity of the problem required until recently an approximative treatment based on modeling the crystal surface by a lattice of polarizable entities, which obey a Clausius-Mossotti-like relation 14,[32][33][34][35] . A photon-induced localization of the electron wave packets constituting the initial and final states of the optical excitation was made responsible for derivative-like features in the optical spectra of passivated Si(001) and Si(113) surfaces [36][37][38][39][40] . Optical anisotropies of the GaAs(001) and (111) surfaces near the 1 E and 0 E CP energies of bulk GaAs were attributed to a so-called surface termination effect, i.e., the termination of the electron wavefunctions at the crystal surface.…”

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Origin of optical anisotropy in reflectance anisotropy spectroscopy of semiconductor surfaces

2006

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The optical anisotropy of a semiconductor surface can have different origins, such as, local-field effects, the electrooptics effect, reconstruction, surface dislocations, and surface roughness. A comprehensive, quantitative picture on how these effects are related to surface optical anisotropies (SOA) can now be obtained thanks to the progress in the modeling of optical properties of surfaces. Linear optical spectra can now be calculated very accurately even for large and complex surface structures. This allows a much better understanding of the origin of specific SOA. In this paper we make a review focused on the microscopic origin of SOA and the present state of the art in the study of reflectance anisotropy spectroscopy of semiconductor surfaces.

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Photon-induced localization in optically absorbing materials

Cited by 16 publications

References 16 publications

Bulk Excitonic Effects in Surface Optical Spectra

Bulk Excitonic Effects in Surface Optical Spectra

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)

Origin of optical anisotropy in reflectance anisotropy spectroscopy of semiconductor surfaces

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