Photon echoes from (In,Ga)As quantum dots embedded in a Tamm-plasmon microcavity

Salewski, M.; Poltavtsev, S. V.; Kapitonov, Yu. V.; Vondran, Johanna; Yakovlev, D. R.; Schneider, Christian; Kamp, M.; Höfling, Sven; Oulton, Ruth; Акимов, И. А.; Kavokin, A. V.; Bayer, М.

doi:10.1103/physrevb.95.035312

Cited by 29 publications

(17 citation statements)

References 35 publications

(67 reference statements)

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“…Resonant excitation of the optical transitions with sufficiently large intensity makes it possible to switch from χ (3) regime of photon echo generation to the regime of coherent Rabi oscillations, which might be observed in certain systems [25,27,28]. Since the generation of the echo signal requires at least two optical pulses, the amplitude of each of them can be varied for that purpose.…”

Section: Rabi Oscillationsmentioning

confidence: 99%

Photon Echo from Localized Excitons in Semiconductor Nanostructures

et al. 2018

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An overview on photon echo spectroscopy under resonant excitation of the exciton complexes in semiconductor nanostructures is presented. The use of four-wavemixing technique with the pulsed excitation and heterodyne detection allowed us to measure the coherent response of the system with the picosecond time resolution. It is shown that, for resonant selective pulsed excitation of the localized exciton complexes, the coherent signal is represented by the photon echoes due to the inhomogeneous broadening of the optical transitions. In case of resonant excitation of the trions or donor-bound excitons, the Zeeman splitting of the resident electron ground state levels under the applied transverse magnetic field results in quantum beats of photon echo amplitude at the Larmor precession frequency. Application of magnetic field makes it possible to transfer coherently the optical excitation into the spin ensemble of the resident electrons and to observe a long-lived photon echo signal. The described technique can be used as a high-resolution spectroscopy of the energy splittings in the ground state of the system. Next, we consider the Rabi oscillations and their damping under excitation with intensive optical pulses for the excitons complexes with a different degree of localization. It is shown that damping of the echo signal with increase of the excitation pulse intensity is strongly manifested for excitons, while on trions and donor-bound excitons this effect is substantially weaker.

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Section: Rabi Oscillationsmentioning

confidence: 99%

Photon Echo from Localized Excitons in Semiconductor Nanostructures

et al. 2018

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“…A statistical distribution of the dipole moments in the ensemble can result in a variation of the pulse area. However, in contrast to strongly inhomogeneous QD ensembles, this effect is unlikely to take place in a QW structure [25,26]. Here, we, however, have to consider the spatial variation of the pulse within the excitation spot which is modeled by a Gaussian profile E s ∼ exp(−r 2 /2σ 2 R ) in real space (r is the distance from the laser spot center), with σ R characterizing the size of the focused laser beam.…”

Section: Pacs Numbersmentioning

confidence: 99%

Damping of Rabi oscillations in intensity-dependent photon echoes from exciton complexes in a CdTe/(Cd,Mg)Te single quantum well

et al. 2017

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We study Rabi oscillations detected in the coherent optical response from various exciton complexes in a 20 nm-thick CdTe/(Cd,Mg)Te quantum well using time-resolved photon echoes. In order to evaluate the role of exciton localization and inhomogeneous broadening we use selective excitation with spectrally narrow ps-pulses. We demonstrate that the transient profile of the photon echo from the localized trion (X − ) and the donor-bound exciton (D 0 X) transitions strongly depends on the strength of the first pulse. It acquires a non-Gaussian shape and experiences significant advancement for pulse areas larger than π due to non-negligible inhomogeneity-induced dephasing of the oscillators during the optical excitation. Next, we observe that an increase of the area of either the first (excitation) or the second (rephasing) pulse leads to a significant damping of the photon echo signal, which is strongest for the neutral excitons and less pronounced for the donor-bound exciton complex (D 0 X). The measurements are analyzed using a theoretical model based on the optical Bloch equations which accounts for the inhomogeneity of optical transitions in order to reproduce the complex shape of the photon echo transients. In addition, the spreading of Rabi frequencies within the ensemble due to the spatial variation of the intensity of the focused Gaussian beams and excitation-induced dephasing are required to explain the fading and damping of Rabi oscillations. By analyzing the results of the simulation for the X − and the D 0 X complexes we are able to establish a correlation between the degree of localization and the transition dipole moments determined as µ(X − )=73 D and µ(D 0 X)=58 D. PACS numbers:Introduction. Coherent control of excitonic states in semiconductor nanostructures under resonant excitation with intense optical pulses attracts a lot of attention in relation with possible applications in quantum information [1]. These ideas exploit coherent rotations of the Bloch vector in the photoexcited two-level system (TLS), which depends on the area of the exciting pulse via Rabi oscillations [2][3][4]. Since stronger localization of excitons is in favor of longer decoherence times, most of the studies of coherent control have concentrated on quantum dots (QD) [3,5,6]. However, the strong localization in QDs is accompanied by large variations in QD size, shape, and composition which consequently leads to the large inhomogeneous broadening of the optical transitions when an ensemble of emitters is used. Therefore, most Rabi oscillation studies were performed on single QDs [7-10].In semiconductor quantum well (QW) structures the inhomogeneous broadening of the optical transitions is significantly smaller as compared to QD systems, i.e. it is possible to selectively address different exciton complexes, such as free and localized excitons, localized charged excitons (trions, X − ), and donor-bound excitons (D 0 X). Therefore, QW structures can be considered as a model system for the investigation of Rabi oscillations and t...

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“…For instance, the photoluminescence (PL) decay time appeared to be as long as 1350 ps for InGaAs QDs studied in ref. , and the coherence time was 48 ps for InGaAs QDs studied in ref. .…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

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et al. 2019

Physica Status Solidi (b)

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Optical and structural study of a system of InAs quantum dots (QDs) buried under low‐temperature (LT) grown GaAs layers with different buffer layers in between has been performed. It has been shown that the buffer is very important for both atomic structure and electronic processes. The direct overgrowth at low temperature causes the formation of misfit dislocation and related drop of the photoluminescence (PL) intensity from the InAs QDs. The defect formation is eliminated by using either 5 nm thick GaAs or combined AlAs/GaAs buffer. Strong changes in the QD‐related PL intensity and line shape are experimentally revealed in the case of thin GaAs buffer. These changes are quantitatively described in terms of electron tunneling from the InAs QDs through the GaAs barrier to the continuum of states in the LT‐GaAs. When a 2.5 nm thick portion of the GaAs buffer is substituted by AlAs, the barrier becomes nontransparent for the electron tunneling from the ground states in the InAs QDs. As a result, the QD‐related PL becomes much stronger and the line shape becomes similar to that from the reference sample in the photon energy range of ground state transitions.

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Photon echoes from (In,Ga)As quantum dots embedded in a Tamm-plasmon microcavity

Cited by 29 publications

References 35 publications

Photon Echo from Localized Excitons in Semiconductor Nanostructures

Photon Echo from Localized Excitons in Semiconductor Nanostructures

Damping of Rabi oscillations in intensity-dependent photon echoes from exciton complexes in a CdTe/(Cd,Mg)Te single quantum well

Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs

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