Photomechanical effect leading to extraordinary ductility in covalent semiconductors

Wang, Hongwei; Song, Shuangxi; Zou, Xinshu; Wang, Fangxi; Zhang, Zhifu; Wang, Xiaodong; Reddy, Kolan Madhav; An, Qi

doi:10.1103/physrevb.100.094110

Cited by 14 publications

(12 citation statements)

References 36 publications

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“…H, The stress–strain curve obtained in complete darkness up to the ε t = 10% and the further deformation under UV light. I, Hardness ( H ) and elastic modulus ( E ) measured by nanoindentation of single‐crystal GaP in complete darkness and light illumination; data are taken from Reference 72…”

Section: Plastic Inorganic Materialsmentioning

confidence: 99%

“…In contrast to the plasticity of ZnS in darkness, enhanced plasticity in light was observed in GaP as indicated by the reduced hardness and modulus measured by nanoindentation (Figure 4I). 72 This phenomenon is ascribed to the lowered slipping energy caused by photo‐induced electron‐hole pairs. These studies suggest that the mechanical properties of semiconductors can be readily tuned by light, and the classically brittle materials can become plastic under certain light conditions.…”

Section: Plastic Inorganic Materialsmentioning

confidence: 99%

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Room‐temperature plastic inorganic semiconductors for flexible and deformable electronics

Chen

Wei

Zhao

et al. 2020

InfoMat

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Flexible electronics ushers in a revolution to the electronics industry in the 21st century. Ideally, all components of a flexible electronic device including the functional component shall comply with the deformation to ensure the structural and functional integrity, imposing a pressing need for developing roomtemperature strain-tolerant semiconductors. To this end, there is a long-standing material dilemma: inorganic semiconductors are typically brittle at room temperature except for size-induced flexibility; by contrast, organic semiconductors are intrinsically soft and flexible but the electrical performance is poor. This is why the discovery of bulk plasticity in Ag 2 S at room temperature and ZnS in darkness is groundbreaking in solving this long-standing material dilemma between the mechanical deformability and the electrical performance. The present review summarizes the background knowledge and latest advances in the emerging field of plastic inorganic semiconductors. At the outset, we argue that the plasticity of inorganic semiconductors is vital to strain tolerance of electronic devices, which has not been adequately emphasized. The mechanisms of plasticity are illustrated from the perspective of chemical bonding and dislocations. Plastic inorganic materials, for example, ionic crystals (insulators), ZnS in darkness, and Ag 2 S, are discussed in detail in terms of their prominent mechanical properties and potential applications. We conclude the article with several key scientific and technological questions to address in the future study.

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Section: Plastic Inorganic Materialsmentioning

confidence: 99%

Section: Plastic Inorganic Materialsmentioning

confidence: 99%

Room‐temperature plastic inorganic semiconductors for flexible and deformable electronics

Chen

Wei

Zhao

et al. 2020

InfoMat

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“…In addition, the photomechanical effects have been debated for several decades. Recent studies indicated that the photoexcited e–h pairs have a significant effect on the twinning or dislocation deformation mechanism in both ionic and covalent semiconductors. , The photomechanical effect suggests that e–h pairs play an important role in phonon transport properties since a phonon is directly related to lattice vibration. However, the influence of e–h pairs on lattice thermal conductivity remains not fully understood so far, especially in heavily doped semiconductors with a carrier concentration well above 10 19 cm –3 . , …”

Section: Introductionmentioning

confidence: 99%

Drastic Modification of Lattice Thermal Conductivity in Thermoelectrics Induced by Electron–Hole Pairs

2021

ACS Appl. Mater. Interfaces

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Low lattice thermal conductivity (κL) is desirable for advancing thermoelectric (TE) materials and devices. However, κL depends on many factors such as phonon scattering sources, electron–phonon interactions, etc. It remains not fully understood how κL is influenced by excited electron–hole (e–h) pairs ubiquitously present in thermoelectrics. To address this issue, the constrained density functional theory (CDFT) simulations are performed to investigate the phonon transport properties of two typical TE materials, Mg2Si and PbTe. Surprisingly, at high e–h concentrations of ∼1021 cm–3, the κL of Mg2Si is reduced significantly by ∼30% due to the softening phonon modes. In contrast, the κL of PbTe first decreases by ∼18% at a relatively low e–h concentration of 2.34 × 1020 cm–3, but it is enhanced by ∼3.4% as the carrier concentration increases to 7.02 × 1020 cm–3. The different behaviors of these two materials arise from the different distributions of excess electrons and holes under e–h excitation. The simulation results suggest that controlling e–h pairs may offer a promising approach to design high-performance TE devices.

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“…The ultra-precise detection on extremely weak biological and physical processes occurring at the nanoscale has always been a strong desire, which can find important applications in probing DNA hybridization [ 1 , 2 ], molecule assembly [ 3 , 4 ], thermal expansion [ 5 , 6 ], and photomechanical effects [ 7 , 8 ]. On the road towards extra-high dimensional resolution, localized surface plasmon resonances (LSPRs) parking at the deep subwavelength nanocavity between coupled plasmonic nanostructures have attracted great attention [ 9 , 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Graphene Plasmon Resonances for Electrically-Tunable Sub-Femtometer Dimensional Resolution

Zhang

et al. 2020

Nanomaterials

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A coupled graphene structure (CGS) is proposed to obtain an electrically tunable sub-femtometer (sub-fm) dimensional resolution. According to analytical and numerical investigations, the CGS can support two branches of localized surface plasmon resonances (LSPRs), which park at the dielectric spacer between two pieces of graphene. The coupled efficiencies of the odd-order modes are even four orders of magnitude higher than that of the even-order modes. In particular, a sub-fm resolution for detecting the change in the spacer thickness can be reached using the lowest order LSPR mode. The LSPR wavelength and the dimensional differential resolution can be electrically-tuned from 9.5 to 33 μm and from 4.3 to 15 nm/pm, respectively, by modifying the chemical potential of the graphene via the gate voltage. Furthermore, by replacing the graphene ribbon (GR) at the top of the CGS with multiple GRs of different widths, a resonant frequency comb in the absorption spectrum with a tunable frequency interval is generated, which can be used to detect the changes in spacer thicknesses at different locations with sub-fm resolution.

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Photomechanical effect leading to extraordinary ductility in covalent semiconductors

Cited by 14 publications

References 36 publications

Room‐temperature plastic inorganic semiconductors for flexible and deformable electronics

Room‐temperature plastic inorganic semiconductors for flexible and deformable electronics

Drastic Modification of Lattice Thermal Conductivity in Thermoelectrics Induced by Electron–Hole Pairs

Graphene Plasmon Resonances for Electrically-Tunable Sub-Femtometer Dimensional Resolution

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