2014
DOI: 10.1016/j.apsusc.2014.09.144
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Photoluminescent properties of Ce-doped HfO x N y thin films prepared by magnetron sputtering

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Cited by 3 publications
(1 citation statement)
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“…The sheet resistance of thin film also increased with the increasing of argon pressure ,which indicated the electricity of thin films weakened significantly. When the gas pressure was more than 0.6Pa, sheet resistance increased more quickly, conductivity of thin films also decreased rapidly.It showed the opportunity of collision between energetic particles and argon gas molecules enhanced with the increasing of Ar gas pressure in vacuum,which caused free path of charged particles short, the kinetic energy of silver particles sputtered out also reduced.So silver particles is not easily deposited on the fiber surface, conductive performance of thin film also reduced [5].…”
Section: Resultsmentioning
confidence: 99%
“…The sheet resistance of thin film also increased with the increasing of argon pressure ,which indicated the electricity of thin films weakened significantly. When the gas pressure was more than 0.6Pa, sheet resistance increased more quickly, conductivity of thin films also decreased rapidly.It showed the opportunity of collision between energetic particles and argon gas molecules enhanced with the increasing of Ar gas pressure in vacuum,which caused free path of charged particles short, the kinetic energy of silver particles sputtered out also reduced.So silver particles is not easily deposited on the fiber surface, conductive performance of thin film also reduced [5].…”
Section: Resultsmentioning
confidence: 99%