Abstract:Photoluminescence temperature quenching of tetraphenylporphyrins thin films on silicon substrates have been investigated. Free-based tetraphenylporphyrin (H2TPP) and Zinc-tetraphenylporphyrin (ZnTPP) films were obtained by thermal evaporation in vacuum. The photoluminescence properties of these samples are observed in the wide temperature range from 77 to 300 K. The temperature-depended photoluminescence intensity of ZnTPP exhibits abnormal behaviour. An increase in the photoluminescence intensity is observed … Show more
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