Photoluminescence study of ZnCdO alloy

Mohanta, Antaryami; Thareja, R. K.

doi:10.1063/1.2830985

Cited by 39 publications

(21 citation statements)

References 26 publications

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“…29,30 As temperature increases further, the carriers in lower lying localized states are thermally activated to occupy higher energy localized states and gradually approach to an equilibrium energy distribution, which leads to a decrease of FWHM of PL emission band 29 in the temperature range of 100 K < T < 200 K. At sufficiently high temperatures (beyond 200 K), the FWHM increases again in accordance with the thermal broadening of PL line shape. 31 However, in unalloyed semiconductors with the absence of carrier localization, the FWHM increases monotonically with temperature which can be expressed by the following relation: 32 CðTÞ ¼ Cð0Þ þ aT þ b=½expð hx LO =k B TÞ À 1;…”

Section: Resultsmentioning

confidence: 99%

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Mohanta

Wang

Young

et al. 2015

Journal of Applied Physics

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Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of $12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, s r , extracted from the TRPL profile shows $T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature. V C 2015 AIP Publishing LLC.

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Section: Resultsmentioning

confidence: 99%

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Mohanta

Wang

Young

et al. 2015

Journal of Applied Physics

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“…In spite of that, ternary ZnCdO is regarded as an ideal candidate for the active layer in a quantum well of ZnO-based devices. However, very few reports on ZnCdO have been published up to now [12][13][14]. Therefore, the fundamental properties of ZnCdO alloy such as bandgap engineering, thermal stability of heterointerface, index of refraction and crystal growth conditions are surely requested for more application in optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on Zn_1‐xCd_xO layers grown by radio‐frequency magnetron co‐sputtering

Kim

Park

et al. 2010

Cryst. Res. Technol.

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Zn 1-x Cd x O layers were deposited on the sapphire substrate using the radio-frequency magnetron co-sputtering system. The grown Zn 1-x Cd x O layers were carried out in the post-annealing treatment for 1 min at the 800 o C oxygen-ambient by the rapid thermal annealing (RTA) method. X-ray diffraction (XRD) experiment shows that the Zn 1-x Cd x O layers are changed from the single phase of the hexagonal structure at 0≤x≤0.08 to the double phase of hexagonal-and-cubic structure at x=0.13. Thus, the maximum Cd-composition ratio with the hexagonal structure was found out to be x=0.08. Also, the crystallinity of Zn 1-x Cd x O layers at x=0.13 was remarkably improved by the RTA annealing treatment. This crystal quality improvement was thought to be associated with the relaxation of the compressive strain remaining in the Zn 1-x Cd x O layers. Therefore, the results of XRD and transmittance lead that the crystal quality of the Zn 1-x Cd x O layers forming the hexagonal ZnO phase is better than that forming the cubic CdO phase. Consequently, the reliable formation and the crystallinity of the Zn 1-x Cd x O layers were achieved by using the RTA method of short-time thermal-annealing at the high temperature.

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“…Moreover, it is commercially available with advantages of low cost, nontoxicity, high chemical and thermal stability and high radiation hardness [8]. CdO is the most promising candidate for narrowing the band gap of ZnO and stretching the emission spectrum from UV to the visible spectral region [9]- [12].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Cd-doped ZnO Nanohybrids

Verma

Pandey

Mukherjee

et al. 2014

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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Hybrid inorganic/organicCd-doped ZnO nanostructures called CZO nanohybrids were electrochemically synthesized on Ga-doped ZnO/Si. The CZO nanohybrids comprise alternating layers of organic surfactant and CZO inorganic phase. These lamellar structured nanohybrids were found to be c-axis oriented, perpendicular to the substrate with good crystallinity. During photoluminescence measurement, a strong orange emission from CZO was observed. The nanohybrids were found to have band gap of 3.3 eV, indicating band gap shrinkage relative to ZnO. The nanohybrids hold great promise for the development of hybrid inorganic/organic lightemitting devices.

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Photoluminescence study of ZnCdO alloy

Cited by 39 publications

References 26 publications

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Effect of rapid thermal annealing on Zn_1‐xCd_xO layers grown by radio‐frequency magnetron co‐sputtering

Synthesis and characterization of Cd-doped ZnO Nanohybrids

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Photoluminescence study of ZnCdO alloy

Cited by 39 publications

References 26 publications

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Effect of rapid thermal annealing on Zn1‐xCdxO layers grown by radio‐frequency magnetron co‐sputtering

Synthesis and characterization of Cd-doped ZnO Nanohybrids

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Effect of rapid thermal annealing on Zn_1‐xCd_xO layers grown by radio‐frequency magnetron co‐sputtering