Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

Abstract

Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P2O5) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

“…Noting that 50 K corresponds to a thermal energy of 4.31 meV which is close to the transition energy of a bound exciton (4.1 meV), this behavior could suggest that this bound exciton is more strongly excited as the temperature increases from 50 K. The peak at 3.306 eV could possibly be due to the transition of free electrons from conduction band to neutral acceptors (FA). On the other hand, the peak at 3.245 eV could be due to a donor to acceptor pair (DAP) transition [16].…”

Red luminescence of Zn /ZnO core–shell nanorods in a mixture of LTZA/Zinc acetate matrix: Study of the effects of Nitrogen bubbling, Cobalt doping and thioglycolic acid

“…The luminescence of S1 is decomposed to several peaks that are contributing to form its emission pattern. Peaks at 410, 443, 480, 605 and 630 nm are characteristic emission peaks of Zn and ZnO nanostructures in various reports [17,18,25,27,33,34]. Haibo et al have attributed 480 nm emission peak to the electron transition between the V O and oxygen interstitial (O i ) [17].…”

“…Especially their luminescence properties have been extensively studied due to their application for light emitting diodes (LEDs) and laser fabrication [1][2][3][4][5][6][7][8][9][10][11][12][13]. Room temperature visible emission of ZnO nanostructures from blue to red wavelengths has been reported by many groups [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27]. The green, yellow and red light emissions which are attributed to the deep level emission bands have previously been attributed to several defects in the ZnO crystal structure, e.g.…”

“…O vacancy (V O ) [13] Zn vacancy (V Zn ) [14], O interstitial (O i ) [15] and Zn interstitial (Zn i ) [16,17]. The key role in the luminescence properties of ZnO nanostructures have been realized to be defect engineering [8,[17][18][19][20][21][22][23][24][25][26][27]. The defects have been extensively manipulated by insertion of doping agents into the ZnO crystal structure.…”

“…Different groups have reported green to red emission of ZnO by insertion of Copper (Cu), Manganese (Mn) and Europium (Eu) as doping agent in the structure of ZnO [19][20][21][22]. The luminescence modification of ZnO nanorods (NRs) doped with arsenic (As) [23], Cu [24] phosphorus (P) [25], antimony (Sb) [26] and nitrogen (N) [27] have been published and the effect of introducing these elements on the luminescent properties was investigated. The origin of the red emission peaks is attributed to the electron transition from deep level defects such as oxygen vacancies and oxygen interstitials to valence band (VB), usually observed in the oxygen rich systems and Eu-doped ZnO nanostructures [28].…”