Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates

Галиев, Г. Б.; Климов, Е. А.; Клочков, А. Н.; Lavruhin, D. V.; Пушкарев, С. С.; Maltsev, P. P.

doi:10.1134/s1063782614050078

Cited by 9 publications

(1 citation statement)

References 23 publications

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“…Electrons occupy quantum states with energies ranging from the edge of the first size-quantization subband E 1 to the Fermi level E F , which can be more than 100 meV higher than the energy E 1 at a sufficiently high doping level. The width of the PL spectrum from a QW with 2DEG is often proportional to the sheet electron concentration [31][32][33].…”

Section: Photoluminescence Spectroscopymentioning

confidence: 99%

Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well Structures

Klochkov,

Yskakov,

Vinichenko

et al. 2023

Materials

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The effect of neutron irradiation on the structural, optical, and electronic properties of doped strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum wells was experimentally studied. Heterostructures with a two-dimensional electron gas of different layer constructions were subjected to neutron irradiation in the reactor channel with the fluence range of 2 × 1014 cm−2 ÷ 1.2 × 1016 cm−2. The low-temperature photoluminescence spectra, electron concentration and mobility, and high-resolution X-ray diffraction curves were measured after the deactivation. The paper discusses the effect of neutron dose on the conductivity and optical spectra of structures based on InGaAs quantum wells depending on the doping level. The limiting dose of neutron irradiation was also estimated for the successful utilization of AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs heterostructures in electronic applications.

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Section: Photoluminescence Spectroscopymentioning

confidence: 99%