Photoluminescence studies of CuInSe2: Identification of intrinsic defect levels

Abou‐Elfotouh, F.; Dunlavy, D. J.; Noufi, R.; Kazmerski, Lawrence L.; Bachmann, K. J.

doi:10.1016/0146-3535(84)90057-1

Cited by 40 publications

(9 citation statements)

References 19 publications

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“…Before starting the discussion for the present QDs cases, we briefly summarize the defect states in previously reported bulk CuInSe 2 crystals. Many experimental and theoretical studies on the defect states in CuInSe 2 bulk crystals have been performed, − because the excitonic emission is hardly observed and emissions related to the defect levels of the donor and acceptor are dominant even for a single crystal. According to these studies, a selenium vacancy (V Se ), interstitial copper (Cu i ), and an indium substituted at a copper site (In Cu ) behave as donors, whereas a copper vacancy (V Cu ), an indium vacancy (V In ), and a copper substituting an indium site (Cu In ) behave as acceptors in CuInSe 2 .…”

Section: Discussionmentioning

confidence: 99%

“…According to these studies, a selenium vacancy (V Se ), interstitial copper (Cu i ), and an indium substituted at a copper site (In Cu ) behave as donors, whereas a copper vacancy (V Cu ), an indium vacancy (V In ), and a copper substituting an indium site (Cu In ) behave as acceptors in CuInSe 2 . Several electronic transitions among these defect levels, the conduction band (CB), and the valence band (VB) are observed as PL and cathode luminescence; − the observed emissions significantly depend on whether the chemical composition deviates from stoichiometric to a Cu-rich or In-rich composition. ,, For instance, the transitions from CB to V In and/or Cu In acceptors and from V Se and/or Cu i to VB are dominant for the Cu-rich composition; on the other hand, donor−acceptor pair (DAP) recombination, such as from V Se to V Cu and from In Cu to V Cu , are dominant for the In-rich composition.…”

Section: Discussionmentioning

confidence: 99%

“…Several electronic transitions among these defect levels, the conduction band (CB), and the valence band (VB) are observed as PL and cathode luminescence; [24][25][26][27][28][29] the observed emissions significantly depend on whether the chemical composition deviates from stoichiometric to a Cu-rich or In-rich composition. 26,27,29 For instance, the transitions from CB to V In and/or Cu In acceptors and from V Se and/or Cu i to VB are dominant for the Cu-rich composition; on the other hand, donor-acceptor pair (DAP) recombination, such as from V Se to V Cu and from In Cu to V Cu , are dominant for the In-rich composition.…”

Section: Discussionmentioning

confidence: 99%

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Colloidal Synthesis of Ternary Copper Indium Diselenide Quantum Dots and Their Optical Properties

2009

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Ternary direct semiconductor CuInSe2 quantum dots (QDs) with average particle sizes ranging from 1.2 to 5.6 nm have been synthesized by a colloidal route using commercially available materials. The size-dependent optical band gap and photoluminescence (PL) band shift due to the quantum size effect were successfully observed. The optical band gap evaluated from the optical absorption spectra was varied from 1.48 eV for the 5.6-nm QDs to 1.66 eV for the 1.2-nm QDs. In the PL spectra, the wavelength of the emission band varied from 918 to 838 nm corresponding to the crystal size variation from 5.6 to 1.2 nm. Because the PL band showed a large Stokes shift above 100 meV, the origin of the PL band was related to the electronic transition via defect levels. Based on the slightly In-rich composition of the QDs and the comparatively large increase in energy of the PL band with decreasing crystal size, the emission was suggested to be due to the recombination between electrons in the quantized conduction band and holes in the copper vacancy acceptor.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Colloidal Synthesis of Ternary Copper Indium Diselenide Quantum Dots and Their Optical Properties

2009

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“…The first PL studies on CuInSe 2 were performed on single crystals, and still the luminescence lines were rather broad [29][30][31]. Among the first to observe narrow donor-acceptor transitions was Abou-Elfotouh et al [32], albeit they interpret the DA transitions falsely as excitons. The early work of Niki et al [33][34][35] was based on high-quality thin films and crystals and allowed pioneering investigation of the temperature and intensity dependencies of the observed PL spectra.…”

Section: A Two Acceptors and A Donormentioning

confidence: 99%

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Spindler

Babbe

Wolter

et al. 2019

Phys. Rev. Materials

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The electronic defects in any semiconductor play a decisive role for the usability of this material in an optoelectronic device. Electronic defects determine the doping level as well as the recombination centers of a solar cell absorber. Cu(In, Ga)Se 2 is used in thin-film solar cells with high and stable efficiencies. The electronic defects in this class of materials have been studied experimentally by photoluminescence, admittance, and photocurrent spectroscopies for many decades now. The literature results are summarized and compared to new results by photoluminescence of deep defects. These observations are related to other experimental methods that investigate the physicochemical structure of defects. To finally assign the electronic defect signatures to actual physicochemical defects, a comparison with theoretical predictions is necessary. In recent years the accuracy of these calculations has greatly improved by the use of hybrid functionals. A comprehensive model of the electronic defects in Cu(In, Ga)Se 2 is proposed based on experiments and theory. The consequences for solar cell efficiency are discussed.

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“…The electrical properties of Cu ternary semiconductors are determined by native defects [4]. There are three possible electrically actives defects namely, vacancies, interstitials and antisite defects [5][6][7]. It is these defects which determine the nature of the conductivity of CIS films whether n type or p type.…”

Section: Copper Indium Selenide (Cis) and Copper Indium Gallium Selenmentioning

confidence: 99%

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

Mandati¹,

Sarada²,

Dey³

et al. 2018

Semiconductors - Growth and Characterization

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CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) semiconductors are the most studied absorber materials for thin films solar cells due to their direct bandgap and large absorption coefficient. The highly efficient CIGS devices are often fabricated using expensive vacuum based technologies; however, recently electrodeposition has been demonstrated to produce CIGS devices with high efficiencies and it is easily amenable for large area films of high quality with effective material use and high deposition rate. In this context, this chapter discusses the recent developments in CIS and CIGS technologies using electrodeposition. In addition, the fundamental features of electrodeposition such as direct current, pulse and pulse-reverse plating and their application in the fabrication of CIS and CIGS films are discussed. In conclusion, the chapter summarizes the utilization of pulse electrodeposition for fabrication of CIS and CIGS films while making a recommendation for exploring the group's unique pulse electroplating method.

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Photoluminescence studies of CuInSe2: Identification of intrinsic defect levels

Cited by 40 publications

References 19 publications

Colloidal Synthesis of Ternary Copper Indium Diselenide Quantum Dots and Their Optical Properties

Colloidal Synthesis of Ternary Copper Indium Diselenide Quantum Dots and Their Optical Properties

Electronic defects in Cu(In,Ga)Se2 : Towards a comprehensive model

Pulsed Electrochemical Deposition of CuInSe2 and Cu(In,Ga)Se2 Semiconductor Thin Films

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