Photoluminescence studies of 2DEG confinement in InAs ultrathin layer introduced in GaAs/AlGaAs structure

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

“…Recently, HEMT structures with InAsinserted channel have been demonstrated on GaAs substrates [6][7][8][9][10]. To explore various physical properties of InAs HEMTs structures, numerous characterization methods have been applied, including X-ray techniques, transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) [11][12][13][14]. Most of the above methods require special conditions such as low temperature (PL) or special sample preparation (TEM).…”

Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures

“…For the Si-delta-doped samples, we have found that the P 1 peak can be well described by a convolution of two Gaussian peaks assigned to optical transitions that occur, respectively, between the fundamental states of electrons to heavy holes (E e-hh ), and electrons to light holes (E e-lh ), in InAs ultrathin quantum well [8,19]. For It is clearly seen that the PL spectrum shows remarkable doping dependence, i.e., a high energy band appears in the most doped sample and the PL intensity increases when the Si-doping concentration increases.…”

“…Because of the electrostatic attraction these carriers remain close to their ionized donors and form a two-dimensional electro gas (2DEG) [4][5][6]. InAs ultrathin layer has been demonstrated to be an excellent channel layer for the InAs/GaAs HEMT [7][8][9].…”

Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junction

“…III-V compound semiconductors, which consist of group III and V elements, have high electron mobility and luminescent efficiency as compared to Si, and have been commercialized as optical devices or electronic devices, such as high performance light emitting diode(LED) [1] , multi-junction solar cell, high electron mobility transistor(HEMT) [2]~ [4] and so on. Especially, group-III nitride semiconductor is the only material, which can emit light of wide energy range from blue to red.…”