Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Taghipour, Zahra; Rogers, V.; Ringel, Brett L.; Liu, A.W.K.; Fastenau, J. M.; Lubyshev, D.; Nelson, Scott A.; Krishna, S.

doi:10.1016/j.jlumin.2020.117581

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…Because of its lower free electron concentration, the achieved absorption will be extremely narrow [25,26]. The design is extremely useful for narrowband-responsive bolometers used as focal-plane-array imaging detectors [27]. The detector can also be used for flammable, toxic, and harmful gases such as CH 4 , CO, and C 2 H 6 in the midinfrared region and SO 2 F 2 and SF 6 in the far-infrared [28].…”

Section: Introductionmentioning

confidence: 99%

[Retracted] The Study of Midinfrared Extremely Narrow Dual‐Band Absorber Based on a Novel Metamaterial Structure

Zhang

et al. 2021

Journal of Sensors

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Due to the problems that the metal pattern layer on the top of the traditional metamaterial structure is easy to be oxidized and easy to fall off, in this paper, a novel semiconductor metamaterial nanostructure composed of a periodic array of GaAs-SiO2 cubes and a gold (Au) film has been proposed. Using FDTD solutions software to prove this metamaterial structure can achieve ultranarrow dual-band, nearly perfect absorption with a maximum absorbance of 99% and a full-width at half-maximum (FWHM) value that is less than 20 nm in the midinfrared region. The refractive index sensitivity is demonstrated by changing the background index and analyzing the absorption performance. It had been proved that this absorber has high sensitivity (2000/RIU and 1300/RIU). Using semiconductor material instead of the metal material of the top pattern layer can effectively inhibit the performance failure of the metamaterial structure caused by metal oxidation. The proposed narrow, dual-band metamaterial absorber shows promising prospects in applications such as infrared detection and imaging.

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Section: Introductionmentioning

confidence: 99%

[Retracted] The Study of Midinfrared Extremely Narrow Dual‐Band Absorber Based on a Novel Metamaterial Structure

Zhang

et al. 2021

Journal of Sensors

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“…Taghipour et al [182,189,190] investigated the photovoltaic properties of InAsSb nBn unipolar detectors on Si substrates compared to other substrates including GaSb and GaAs. A schematic diagram of the device's structure is shown in figure 17(a).…”

Section: Sb-based Ir Pds Integrated To a Si Platformmentioning

confidence: 99%

“…Temperaturedependent tests suggested that the minority carrier lifetime decreases monotonically as the temperature increases, and the dominant recombination was determined by the Auger recombination at higher temperatures, while the SRH recombination was dominant at low temperatures. According to PL measurements, the PL intensity was less dependent on the lattice mismatch-induced dislocations; it was mainly affected by cracks originating from the mismatch in the thermal expansion coefficient of the Si substrate and the epilayers [182,189,190].…”

Section: Sb-based Ir Pds Integrated To a Si Platformmentioning

confidence: 99%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector

Kang,

Roh,

Kim

et al. 2024

Journal of Alloys and Compounds

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Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Cited by 5 publications

References 9 publications

[Retracted] The Study of Midinfrared Extremely Narrow Dual‐Band Absorber Based on a Novel Metamaterial Structure

[Retracted] The Study of Midinfrared Extremely Narrow Dual‐Band Absorber Based on a Novel Metamaterial Structure

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector

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