Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

Isotopic Heft on the B1l Silent Mode in Ultra-Narrow Gallium Nitride Nanowires

“…Reflection high-energy electron diffraction (RHEED) patterns show a reconstructed surface pattern (7 × 7) for the Si substrates. Elemental Ga, Al, and RF plasma-enhanced N 2 were used as sources, which is a clean method for growing high-purity structures with very good crystalline quality. − We can exclude the existence of any phonon mode associated with lattice disorder, breakdown of the translational symmetry, or defects. The growth of the GaN NWs was performed under an N -rich condition with a Ga-to-N ratio of 1:3.…”