Layered
Transition Metal Dichalcogenides (TMDs) are an important
class of materials that exhibit a wide variety of optoelectronic properties.
The ability to spatially tailor their expansive property-space (e.g.,
conduction behavior, optical emission, surface interactions) is of
special interest for applications including, but not limited to, sensing,
bioelectronics, and spintronics/valleytronics. Current methods of
property modulation focus on the modification of the basal surfaces
and edge sites of the TMDs by the introduction of defects, functionalization
with organic or inorganic moieties, alloying, heterostructure formation,
and phase engineering. A majority of these methods lack the resolution
for the development of next-generation nanoscale devices or are limited
in the types of functionalities useful for efficient TMD property
modification. In this study, we utilize electron-beam patterning on
monolayer TMDs (MoSe2, WSe2 and MoS2) in the presence of a pressure-controlled atmosphere of water vapor
within an environmental scanning electron microscope (ESEM). A series
of parametric studies show local optical and electronic property modification
depending on acceleration voltage, beam current, pressure, and electron
dose. The ultimate pattern resolution achieved is 67 ± 9 nm.
Raman and photoluminescence spectroscopies coupled with Kelvin Probe
Force Microscopy reveal electron dose-dependent p-doping in the patterned
regions, which we attribute to functionalization from the products
of water vapor radiolysis (oxygen and hydroxyl groups). The modulation
of the work function through patterning matches well with Density
Functional Theory modeling. Finally, post-functionalization of the
patterned areas with an organic fluorophore demonstrates a robust
method to achieve nanoscale functionalization with high fidelity.