Photoluminescence properties of type I InAs/InGaAsSb quantum dots

Mansour, Afef Ben; Sellami, Rihab; Melliti, A.; Salhi, A.

doi:10.1140/epjb/s10051-022-00357-2

Cited by 1 publication

(1 citation statement)

References 22 publications

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“…In this context, it is worthy to mention that InAs/GaAs QDs heterostructures have gained tremendous attention due to the multiple optoelectronic applications and corresponding Stranski-Krastanov (S-K) self-assemble growth of InAs QDs is widely accepted among the research community due to its transformation of strained layer (2D) to island (3D) for growing higher volumetric QDs [5]. The prime advantage of such S-K QDs heterostructure is to extent the emission wavelength, which further highly useful for mid-and long-wave photodetector applications [6] and variations of capping layer composition and number of QDs stacks are the most easy and reliable approaches to improve the absorptivity and detection limit till mid and long wavelengths [7]. In such multi-layer S-K QD's growth, strain is propagating from bottom layer to top layer, which results the formation of higher number of defects and dislocations throughout the heterostructures [8].…”

Section: Introductionmentioning

confidence: 99%

Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (S-K) strain-coupled quantum dots (QDs)

Saha,

Ahmed Sabiha,

Gourishetty

et al. 2024

Physics and Simulation of Optoelectronic Devices XXXII

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The current work shows a novel multilayer heterostructure with Stranski-Krastanov (S-K) quantum dots (QDs), which shows the relatively superior performance in terms of strain reduction and propagation, and optical emission. Here, 2.7 ML InAs/GaAs(Sb) multilayer S-K QDs heterostructures are grown by employing a solid-source Molecular Beam Epitaxy (MBE) system. The multilayer heterostructures consist of single, bi, and hepta-layer S-K QDs with an adaptation of novel growth strategy by estimation of overgrowth percentage. Such overgrowth percentage optimization and new growth strategy is able to grow uniform dots in reach layer from bottom to top layer and residual strain is reduced with the increasing QD layers. To maintain the similar overgrowth percentage (33%) throughout the heterostructures, monolayer coverage is maintained to be 2.5 ML from just next layer of bottom QDs layer to top for each multilayer heterostructures. The simulation is done by Nextnano software for all the heterostructures to analyse the strain propagation, and bandalignment in depth and all results exhibit that residual strain are almost constant after bi-layer with maximum blue-shift in ground-state emission peak. Low-temperature (19 K) Photoluminescence (PL) measurements are performed to investigate the optical properties of the heterostructures and ground state peaks are found at ~ 1084 nm, which confirms the uniform S-K QDs for all the heterostructures. However, lowest FWHM and highest absorptivity are obtained for hepta-layer heterostructures. Further, HRXRD peaks and corresponding values of strain confirm the enhancement of crystallinity and smooth interfaces with significant amount of reduction in strain for multilayer heterostructures.

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Section: Introductionmentioning

confidence: 99%