Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

Ke, Wen−Cheng; Fu, C. P.; Chen, C. Y.; Lee, L.; Ku, Ching−Shun; Chou, Wu Ching; Chang, Wen‐Hao; Lee, Meng-Chieh; Chen, W. K.; Lin, Wen–Jen; Cheng, Y. C.

doi:10.1063/1.2203510

Cited by 61 publications

(57 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From this point of view, low-dimensional InN-based structures such as multi-quantum-wells (MQWs) [3][4][5] or quantum dots (QDs) 6,7 can improve the efficiency of NIR devices by tuning their operation wavelength through bandgap engineering. Furthermore, the improved carrier confinement should lead to an enhanced linear and nonlinear optical response at resonant wavelengths.…”

mentioning

confidence: 99%

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

et al. 2012

View full text Add to dashboard Cite

We study the carrier localization in InN/In 0.9 Ga 0.1 N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 lm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of $12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN. The extension of the operation wavelength of III-nitrides to the near-infrared (NIR) range is possible thanks to the growth of high-quality InN films displaying a bandgap energy close to 0.65 eV (1.9 lm) at room temperature (RT). The particular optical and electronic properties of this semiconductor have rendered it a subject of extensive research aimed at the development of devices for photovoltaics, optoelectronics (laser diodes and detectors), highspeed electronics, opto-chemical sensing, and terahertz applications.1 Furthermore, thanks to the close-to-resonant behavior at 1.5 lm and saturable absorption of InN with recovery times in the picosecond range, 2 this semiconductor has emerged as a promising choice for all-optical signal processing applications in optical communication networks.From this point of view, low-dimensional InN-based structures such as multi-quantum-wells (MQWs) 3-5 or quantum dots (QDs) 6,7 can improve the efficiency of NIR devices by tuning their operation wavelength through bandgap engineering. Furthermore, the improved carrier confinement should lead to an enhanced linear and nonlinear optical response at resonant wavelengths. In this sense, strong absorption saturation has been recently demonstrated in high-In content InN/InGaN MQWs at 1.55 lm.8 In this paper, we investigate the carrier localization in InN/InGaN MQW structures by means of temperature-dependent photoluminescence (PL) measurements and pump-probe spectroscopy at 1.55 lm. Our results show that a fivefold increase in luminescence efficiency can be obtained in these nanostructures compared to bulk InN. This is consistent with the observation of a longer carrier lifetime in the MQW structure over the bulk material.The samples under study were grown by plasma-assisted molecular-beam epitaxy (PAMBE) on 10-lm-thick GaN-onsapphire templates. The substrate temperature during growth was 450 C and the N-limited growth rate was fixed at 280 nm/h. The MQW structure, designed to have a quasiresonant interband transition at 1.55 lm, consists of 41 periods of InN/In 0.9 Ga 0.1 N QWs with well and barrier thickness of 4.5 nm and 7 nm, respectively. The growth of the MQW structure starts with an InN layer (4.5 nm) at the substrate/ MQW interface, which assures the relaxation of at least 90% of the lattice mismatch at the first interface, as verified in situ by reflective high-en...

show abstract

mentioning

confidence: 99%

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

et al. 2012

View full text Add to dashboard Cite

show abstract

“…[6][7][8][9] Near-infrared photoluminescence (PL) emission was reported for InN QDs on GaN with size dependent peak energy, blue shifting from 0.78 to 1.07 eV when the QD height was reduced from 32.4 to 6.5 nm. 10 We have recently started the growth of InN QDs on high-In-content InGaN layers by plasma-assisted (PA) MBE and found excellent optical performance optimized for intermediate band solar cells and demonstrated applications in the fields of bio-sensors and ion-selective electrodes. [11][12][13][14] As for most of the previous studies, these QD structures were grown on GaN/sapphire templates.…”

Section: à2mentioning

confidence: 99%

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Rodriguez

Aseev

Gómez

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

show abstract

“…nm [Ke 2006], as discussed in chapter 2. In addition, in section 5.2, the growth conditions for InN QDs on high-In-content InGaN layers by PA-MBE, with good optical properties, have been discussed.…”

Section: Growth Of Ingan Alloys Directlymentioning

confidence: 99%

“…A PL energy between 1.1 and 1.2 eV is expected considering only quantum confinement due to the SQD height. Such estimation is commonly considered [Ke 2006] as the SQD diameter is about one order of magnitude larger than the height giving a reasonable accuracy, particularly when the PL band is relatively broad due to SQD size fluctuations.…”

Section: High-in Content Single Ingan Layersmentioning

confidence: 99%