2006
DOI: 10.1007/s10853-006-7461-3
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Photoluminescence properties of nanocrystalline ZnS on nanoporous silicon

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Cited by 22 publications
(13 citation statements)
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“…The pure ZnS, ZnS-GO, and ZnS/Graphene (directly producing ZnS nanoparticle on pure graphene) exhibit one narrow band in the range 427-452 nm, which is due to sulfur vacancies and interstitial sulfur lattice defects or zinc in ZnS [44,45]. This is in agreement with published work on ZnS particles [46][47][48]. In our study, the maximum of PL emission spectra of ZnS-Graphene sample (Fig.…”
Section: Raman Photon ð4þsupporting
confidence: 92%
“…The pure ZnS, ZnS-GO, and ZnS/Graphene (directly producing ZnS nanoparticle on pure graphene) exhibit one narrow band in the range 427-452 nm, which is due to sulfur vacancies and interstitial sulfur lattice defects or zinc in ZnS [44,45]. This is in agreement with published work on ZnS particles [46][47][48]. In our study, the maximum of PL emission spectra of ZnS-Graphene sample (Fig.…”
Section: Raman Photon ð4þsupporting
confidence: 92%
“…This peak translates into a band gap of 2.33 eV. 11,30 The sharp peak that appears to be convoluted with the much broader signature around 540 nm is due to an instrumental effect and is present in all profiles originating from the PL equipment used for this analysis.…”
Section: Sem Images Like Those Illustrated Inmentioning
confidence: 98%
“…ZnS-nanoparticles have a high potential in many different technological applications [2], e.g. as photonic crystals [3,4] or in optoelectronic devices [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…Zinc sulphide is one of the most important II–VI semiconductors with a band gap of about 3.6 eV [1] . ZnS-nanoparticles have a high potential in many different technological applications [2] , e.g. as photonic crystals [3,4] or in optoelectronic devices [5,6] .…”
Section: Introductionmentioning
confidence: 99%