Photoluminescence Properties from β-FeSi₂ Film Epitaxially Grown on Si, YSZ and Si//YSZ

Abstract

To date, various connection rerouting methods for connection-oriented mobile networks have been proposed. The previous methods, however, are limited to specific topologies or environments. In this paper, we propose the connection-information-based rerouting widely applicable to various connection-oriented mobile networks. This method requires neither a specific topology nor a complex connection, enables fast rerouting, provides appropriate route optimality, and can be extended easily.

Iron disilicide formation by Au–Si eutectic reaction on Si substrate

“…Most b-FeSi 2 samples have been annealed at 800-900 8C for 2-40 h to enhance the PL intensity and photovoltaic properties [6][7][8]. It has been suggested that the enhancement of those optical properties by the post-annealing contributes to the decrease in the density of non-radiative centres in b-FeSi 2 crystal [9,10]. Thus, decreasing these crystal defects during b-FeSi 2 film deposition leads to sufficient optical properties without postannealing.…”

Luminescent iron disilicide film growth by metal–organic chemical vapor deposition

“…9) Previous reports have proposed post-annealing as a key factor in enhancing the intensity of photoluminescence (PL) and electroluminescence (EL). [10][11][12][13] The annealing at 1073-1173 K for 2-40 h leads to enhancing the emitting intensity and photovoltaic properties. It has been indicated that the improvement by post-annealing can be attributed to the decrease of the nonradiative recombination centers in the β-FeSi 2 crystal, e.g.…”

“…It has been indicated that the improvement by post-annealing can be attributed to the decrease of the nonradiative recombination centers in the β-FeSi 2 crystal, e.g. Si vacancies in β-FeSi 2 11,14) and at the β-FeSi 2 /Si interface. 15) We previously reported on the enhanced PL spectrum from β-FeSi 2 grown on Cu-or Au-layer pre-coated Si substrates.…”

Control of Iron Disilicide Crystal Structure by Using Liquid Phase Obtained by Au-Si Eutectic Reaction

“…However, lightemitting-diode and photodiode devices using β-FeSi 2 exhibit an emission efficiency of about 0.1 and 0.01%, respectively [3,4]. It has been pointed out that the improvement in these properties can be attributed to the decrease in the density of crystal defects, e.g., non-radiative recombination center, in β-FeSi 2 [5,6]. Thus, decreasing these crystal defects during β-FeSi 2 growth leads to sufficient optical properties.…”