Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations

Serna, Rosalía; Castro, Miguel Delibes de; Chaos, J.A.; Suárez-Garcı́a, A.; Afonso, Carmen N.; Fernández, M.; Vickridge, I.

doi:10.1063/1.1409575

Cited by 39 publications

(46 citation statements)

References 25 publications

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“…9 In our previous works we have shown that alternate pulsed laser deposition ͑PLD͒ from the host ͑Al 2 O 3 ͒ and dopant rare earth ͑RE͒ targets can be used to obtain artificial structures in which the RE concentration and ion distribution are controlled. 10,11 An ArF excimer laser ͓ = 193 nm, = 20 ns full width at half maximum ͑FWHM͒, 2 J cm −2 ͔ was used to ablate independently the Al 2 O 3 and RE targets. The films were designed to have a 300 nm total thickness.…”

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confidence: 99%

Broadband infrared emission from Er–Tm:Al2O3 thin films

Xiao¹,

Serna²,

Afonso³

et al. 2005

Applied Physics Letters

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Thin films of amorphous aluminum oxide (Al2O3) co-doped with Er3+ and Tm3+ have been synthesized by alternate pulsed laser deposition. When pumped at 794 nm a broad emission band over 1400–1700 nm is observed. Two peaks related to the 1540 nm band from Er3+ and to the 1640 nm band from Tm3+ are clearly distinguished. The photoluminescence intensity ratio of the 1640–1540 nm emissions has been controlled by modifying the Tm concentration. A spectrum with a fairly flat profile and a full width at half maximum of 230 nm is obtained for an Er concentration of 7.2×1019cm−3 and a [Tm]∕[Er] concentration ratio of 3. It is found that the Er3+ to Tm3+ energy transfer processes play an important role in the definition of the luminescent response. The large width of the emission band and the excellent optical and thermomechanical properties of the Er–Tm co-doped Al2O3 signal this system as a potential candidate for the development of broadband integrated optical amplifiers.

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confidence: 99%

Broadband infrared emission from Er–Tm:Al2O3 thin films

Xiao¹,

Serna²,

Afonso³

et al. 2005

Applied Physics Letters

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“…In this way the deposition conditions for each target are controlled separately. 11,12 The schematic structure of the films is shown in the inset of Fig. 1 11,12 For the Si deposition 500 pulses on the Si target have been used in order to induce the formation of Si NPs in situ following a Wolmer-Weber growth mode, as has been reported for metal NPs such as Cu and Ag.…”

Section: Methodsmentioning

confidence: 99%

“…11,12 The schematic structure of the films is shown in the inset of Fig. 1 11,12 For the Si deposition 500 pulses on the Si target have been used in order to induce the formation of Si NPs in situ following a Wolmer-Weber growth mode, as has been reported for metal NPs such as Cu and Ag. 13,14 Finally, in order to obtain films with the same total thickness, and thus to compensate for the different values of s in each film, two Al 2 O 3 buffer layers of thickness t have been deposited, one next to the substrate and another capping the film.…”

Section: Methodsmentioning

confidence: 99%

“…The PL intensity value for the film doped only with Er is very weak, in agreement with our previous reports for Er: Al 2 O 3 films which show that in the as-grown condition the films exhibit a negligible emission, and that it is necessary to anneal the films at temperatures higher than 750°C for 1 h to achieve a significant signal. 11,12 For excitation at 514.5 nm the film with s =0 shows an emission intensity that is one order of magnitude larger than that of the film doped only with Er. In Fig.…”

Section: B Pl Enhancementmentioning

confidence: 96%

“…The analysis shows that the Er areal density per layer is 3.4ϫ 10 13 cm −2 , which is similar to that reported in our previous work on Al 2 O 3 : Er films. 11,12 The Si areal density per layer is 7.0 ϫ 10 15 cm −2 , which is equivalent to an effective thickness of 1.4 nm, taking into account the density of the a-Si. 16 The total film thickness is 510Ϯ 10 nm and the s values determined for the films are 0, 4.0, 7.0, and 11.0Ϯ 0.5 nm, showing that a fine control of the deposited Al 2 O 3 has been achieved.…”

Section: A Structural Analysismentioning

confidence: 99%

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Tuning the Er3+ sensitization by Si nanoparticles in nanostructured as-grown Al2O3 films

Núñez-Sánchez

Serna

López

et al. 2009

Journal of Applied Physics

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Influence of size/crystallinity effects on the cation ordering and magnetism of α-lithium ferrite nanoparticles J. Appl. Phys. 111, 034313 (2012) Nanoparticle production in arc generated fireballs of granular silicon powder AIP Advances 2, 012126 (2012) Modeling upconversion of erbium doped microcrystals based on experimentally determined Einstein coefficients J. Appl. Phys. 111, 013109 (2012) Huge enhancement of optical nonlinearities in coupled Au and Ag nanoparticles induced by conjugated polymers Appl. Phys. Lett. 100, 023106 (2012) Size-dependent low-frequency dielectric properties in the BaTiO3/poly(vinylidene fluoride) nanocomposite films Appl. Phys. Lett. 100, 012903 (2012) Additional information on J. Appl. Phys. Nanostructured films consisting of single Si nanoparticles ͑NPs͒ and Er 3+ ions layers separated by nanometer-scale Al 2 O 3 layers of controlled thickness have been prepared in order to tune the energy transfer between Si NPs and Er 3+ ions. The amorphous Si NPs with an effective diameter of ϳ4.5 nm are formed during growth and are able to sensitize the Er 3+ ions efficiently with no postannealing treatments. The characteristic distance for energy transfer from Si NPs to Er 3+ ions in Al 2 O 3 is found to be in the 1 nm range. It is shown that in the nanostructured films, it is possible to achieve an optimized configuration in which almost all the Er 3+ ions have the potential to be excited by the Si NPs. This result stresses the importance of controlling the dopant distribution at the nanoscale to achieve improved device performance.

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Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

310

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations

Cited by 39 publications

References 25 publications

Broadband infrared emission from Er–Tm:Al2O3 thin films

Broadband infrared emission from Er–Tm:Al2O3 thin films

Tuning the Er3+ sensitization by Si nanoparticles in nanostructured as-grown Al2O3 films

Erbium‐doped integrated waveguide amplifiers and lasers

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