Photoluminescence of ZnO thin films on Si substrate with and without ITO buffer layer

Teng, X. M.; Fan, Hong-Tao; Pan, Shanshan; Ye, C; Li, G H

doi:10.1088/0022-3727/39/3/008

Cited by 64 publications

(27 citation statements)

References 34 publications

(29 reference statements)

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“…Thus exciton may be observed at room temperature. In our case the excitonic level emission around 386 nm for the ZnO film on quartz substrate is very close to that reported value of 380 nm excitonic recombination for Si substrate [13] corresponding to the free exciton. However, in case of glass substrate no UV emission peak was observed.…”

Section: Photoluminescence (Pl)supporting

confidence: 90%

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Substrate effect on morphology and photoluminescence from ZnO monopods and bipods

Samanta¹,

Chaudhuri

2011

Front. Optoelectron. China

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A simple wet chemical bath deposition has been successfully deployed to fabricate zinc oxide (ZnO) nanostructures. For substrate free growth, the nanostructure is spindle like monopods. But when the nanostructures grow on the glass and quartz substrates, they are bipods (two monopods joined together base to base). Variation in the size of the spindles of the monopods and bipods and the particle size was observed due to the strain exists in the thin film due to lattice mismatch at the interface of the thin film and the substrates. The X-ray diffraction (XRD) and selected area diffraction results confirmed the hexagonal unit cell structures of the monopods and bipods. Also the growth rates of various planes are different and the growth is anisotropic. The substrate free grown monopods show visible photoluminescence (PL) at 421 nm. But the emission gets shifted by 3 and 6 nm for ZnO thin film deposited on quartz and glass substrates respectively due to interfacial strain. In case of ZnO on quartz substrate a strong ultra-violet (UV) peak was observed at 386 nm due to band edge transition. These emissions are also accompanied by few weaker emission peaks due to various defect related transition.

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Section: Photoluminescence (Pl)supporting

confidence: 90%

“…Besides, substrates affect the luminescence behaviour of the material. Teng et al had reported the PL in the UV region at~380 nm (UV-PL) from ZnO thin film grown on Si substrate [13]. This emission peak shifts to 395 nm for the sample grown on ITO/Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Substrate effect on morphology and photoluminescence from ZnO monopods and bipods

Samanta¹,

Chaudhuri

2011

Front. Optoelectron. China

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“…Shi et al 2002;Kang et al 2004;Teng et al 2006), the observation is unusual. It may be noted that the…”

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confidence: 88%

ZnO(101) films by pulsed reactive crossed-beam laser ablation

2009

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We have employed pulsed reactive crossed-beam laser ablation (PRCLA) to deposit a (101) oriented ZnO film. In this method, a supersonic jet of oxygen pulse is made to cross the laser plume from a zinc metal target while being carried to the Si(111) substrate. The obtained deposit was nanocrystalline ZnO as confirmed by a host of characterization techniques. When the substrate was held at varying temperatures, from room temperature to 900°C, the crystallinity of the obtained films increased as expected, but importantly, the crystallographic orientation of the films was varied. High substrate temperatures produced the usual (001) oriented films, while lower substrate temperatures gave rise to increasingly (101) oriented films. The substrate held at room temperature contained only the (101) orientation. The film morphology also varied with the substrate temperature, from being nanoparticulate to rod-like deposits for higher deposition temperatures. Surprisingly, the (101) orientation showed reactivity with acetone forming carbonaceous nanostructures on the surface.

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“…ZnO thin film grown on ITO covered glass substrate exhibits good crystal quality resulting from a small lattice mismatch (3%) between the neighboring oxygen-oxygen (O-O) distance on the close-packed (1 1 1) plane of ITO and (0 0 1) plane of ZnO [9]. Therefore, we propose that combining the high conductive ITO film as seed layer with MOCVD-ZnO films maybe is an effective way to obtain high quality TCO films.…”

Section: Introductionmentioning

confidence: 99%