Photoluminescence of X‐ray irradiated Cd<scp>S</scp>e nanocrystals embedded in dielectric matrices

Prymak, M. V.; Azhniuk, Yu. M.; Zvenigorodsky, V. V.; Красилинець, В. М.; Rayevska, O. E.; Stroyuk, A. L.; Gomonnai, A. V.; Zahn, Dietrich R. T.

doi:10.1002/pssa.201228793

Cited by 4 publications

(5 citation statements)

References 38 publications

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“…and . Similarly to CdSe and Se‐rich CdS 1− x Se x nanocrystals, two bands are clearly revealed in the PL spectra. A relatively narrow (near 0.1 eV) higher‐energy PL maximum is located slightly below the first absorption peak energy corresponding to the transition between 1s e electron and 1S 3/2 hole states (HOMO–LUMO transition) in the nanocrystals.…”

Section: Resultsmentioning

confidence: 97%

Optical characterization of Cd_1−xZn_xSe nanocrystals grown in borosilicate glass

Azhniuk

Prymak

Lopushansky

et al. 2013

Physica Status Solidi (b)

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Cd1−xZnxSe nanocrystals with x up to 0.28 and average diameter ranging from 6.5 to 12.5 nm were obtained in borosilicate glass by diffusion‐limited growth. Their average size and chemical composition were determined from the optical absorption and Raman scattering spectra. Comparison of the absorption and photoluminescence spectra exhibits a slight decrease of the Stokes shift with increasing nanocrystal size.

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Section: Resultsmentioning

confidence: 97%

Optical characterization of Cd_1−xZn_xSe nanocrystals grown in borosilicate glass

Azhniuk

Prymak

Lopushansky

et al. 2013

Physica Status Solidi (b)

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“…1 demonstrate that the PL of CdSe-QDs is almost completely quenched already after $18 kGy (SiO 2 ). Although previous works on matrix-embedded CdSe-NCs showed that these are resistant up to 3.2 kGy, 29 experiments using higher doses have not been reported for these QDs yet. Consequently, the absorption of X-rays in this material system generates additional non-radiative channels in the QDs, and the resulting effect on luminescence increases with the absorbed dose.…”

mentioning

confidence: 88%

“…2, top, inset), in accordance with previous ensemble studies. 28,29 Instead, a significant drop in PL intensity occurs for higher doses, as observed in CdTe/CdS-QDs. 31 A control nonirradiated sample of CdSe-QDs shows no significant change of PL intensity over time (Fig.…”

mentioning

confidence: 91%

“…The irradiation effect was explained by the ionization of the QDs and their subsequent chargetransfer with the host matrix. 27,28 For CdSe-QDs embedded in a dielectric matrix, no PL quenching was observed up to a dose of 3.2 kGy 29 in correlation with the effect of X-rays and electron irradiation on absorption. 28,30 Higher doses were tested on CdTe/CdS-QDs embedded in porous Si, which showed a decrease in the PL intensity starting at $5 kGy with complete quenching at $160 kGy (SiO 2 ).…”

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confidence: 94%

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X-ray radiation hardness and influence on blinking in Si and CdSe quantum dots

Pevere

Treskow

Marino

et al. 2018

Applied Physics Letters

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We study the effect of X-ray irradiation on the photoluminescence (PL) efficiency and intermittency (blinking) of single Si/SiO2 and CdSe/CdZnS quantum dots (QDs). Our results show that the PL efficiency of Si nanocrystals is not significantly altered up to a cumulative fluence of 1020 photons/m2 (corresponding to ∼300 kGy of absorbed dose in SiO2), while CdSe particles become completely dark already after a 17 times lower fluence. In both types of QDs, the statistical nature of blinking ON- and OFF-times remains unaltered: mono-exponential for Si and power-law for CdSe QDs. However, the evolution of the blinking parameters with absorbed dose depends on the choice of material. On average, both ON- and OFF-time constants do not vary in Si nanocrystals, highlighting their radiation hardness. Instead, the ON-time exponent increases while the OFF-time exponent decreases with the increasing dose for CdSe dots, confirming their efficiency quenching. Ensemble measurements did not show PL spectral changes neither indicated removal of surface ligands in irradiated CdSe dots. Thus, ionization-generated non-radiative centers in the core-shell system modify blinking of CdSe dots and eventually rapidly quench their emission, in contrast to robust Si/SiO2 nanocrystals. Our study is important for the future use of luminescent QDs in harsh environments, such as space, and the engineering of their blinking properties via ionizing radiation.

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“…Consequently, the results suggest that the damages induced by X‐rays do not affect the recombination mechanism responsible for the light emission of Si‐NCs. Moreover, in terms of radiation hardness, they seem to perform fairly well, also when compared with Cd‐based alternatives, which are usually exposed to lower doses (

<

4 kGy) and exhibit strong quenching already at those values .…”

Section: Resultsmentioning

confidence: 92%

Effect of X‐ray irradiation on the blinking of single silicon nanocrystals

Pevere

Bruhn

Sangghaleh

et al. 2015

Physica Status Solidi (a)

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Photoluminescence (PL) intermittency (blinking) observed for single silicon nanocrystals (Si‐NCs) embedded in oxide is usually attributed to trapping/de‐trapping of carriers in the vicinity of the NC. Following this model, we propose that blinking could be modified by introducing new trap sites, for example, via X‐rays. In this work, we present a study of the effect of X‐ray irradiation (up to 65 kGy in SiO2) on the blinking of single Si‐NCs embedded in oxide nanowalls. We show that the luminescence characteristics, such as spectrum and life‐time, are unaffected by X‐rays. However, substantial changes in ON‐state PL intensity, switching frequency, and duty cycle emerge from the blinking traces, while the ON‐ and OFF‐ time distributions remain of mono‐exponential character. Although we do not observe a clear monotonic dependence of the blinking parameters on the absorbed dose, our study suggests that, in the future, Si‐NCs could be blinking‐engineered via X‐ray irradiation.

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Photoluminescence of X‐ray irradiated CdSe nanocrystals embedded in dielectric matrices

Cited by 4 publications

References 38 publications

Optical characterization of Cd_1−xZn_xSe nanocrystals grown in borosilicate glass

Optical characterization of Cd_1−xZn_xSe nanocrystals grown in borosilicate glass

X-ray radiation hardness and influence on blinking in Si and CdSe quantum dots

Effect of X‐ray irradiation on the blinking of single silicon nanocrystals

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Photoluminescence of X‐ray irradiated CdSe nanocrystals embedded in dielectric matrices

Cited by 4 publications

References 38 publications

Optical characterization of Cd1−xZnxSe nanocrystals grown in borosilicate glass

Optical characterization of Cd1−xZnxSe nanocrystals grown in borosilicate glass

X-ray radiation hardness and influence on blinking in Si and CdSe quantum dots

Effect of X‐ray irradiation on the blinking of single silicon nanocrystals

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Optical characterization of Cd_1−xZn_xSe nanocrystals grown in borosilicate glass

Optical characterization of Cd_1−xZn_xSe nanocrystals grown in borosilicate glass