Abstract:Abstract. The conversion of ionic valence induced by X-ray irradiation can possibly be applied in X-ray imaging devices. Here, we report the X-ray irradiation time dependence of the valence change of Sm ions doped in a BaSO 4 matrix. The samples were prepared by sintering a mixture of BaSO 4 and Sm 2 O 3 powder. The as-prepared sample consisted mainly of Sm
3+. Sm
2+and Sm 3+ were detected by using the photoluminescence (PL) spectral shapes. After X-ray irradiation (λ = 0.154 nm), the PL intensity of the Sm 2+… Show more
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