Photoluminescence of Si nanocrystallites in different types of matrices

Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique

“…The intensity ratio I 1.40eV /I 2.10eV for both samples was essentially the same, which could be related to a similar silicon neighborhood. The 2.10 eV peak has been previously attributed to defects in the SiO 2 [20]. The difference among these samples is mainly in the c-Si/a-Si ratio, which is evidenced in both the Raman results and the PL results as the intensity at 1.4 eV (nc-Si) and the wide band between 1.5-1.9 eV (a-Si).…”

“…This technique presents some advantages compared to UV-laser ablation such as low deposition cost, good thickness control, possibility of producing films of complex stoichiometry (such as highTc superconductors, intermetallic alloys and glasses), the absence of the dangerous gasses pervading CVD techniques [12], and low deposition temperature. This technique is a process in which a high power electron beam (15)(16)(17)(18)(19)(20) is pulsed producing the volatilization of the impacted region of the material. In this work we study the formation of silicon clusters in the film and the influence of the deposition process on the photoluminescence.…”

Emission efficiency of crystalline and amorphous Si nanoclusters

“…The a-Si:H films were grown by the hotwire CVD (HW-CVD) technique in a high vacuum deposition system with a background pressure of ~8x10 -7 Torr [8][9][10][11]. The gases flowed through the coiled tungsten filament that was kept at temperatures of 1650, 1750, 1850 and 1950 °C [8][9][10][11][12].…”

“…The gases flowed through the coiled tungsten filament that was kept at temperatures of 1650, 1750, 1850 and 1950 °C [8][9][10][11][12]. Deposited a-Si:H films contain a substantial concentration of hydrogen.…”

“…The impact of glass substrate temperatures [8][9][10][11][12] and different oxygen flows [13][14][15] on the optical parameters of such films were investigated by us earlier. In this paper the attention will be paid mainly to the study of films obtained at different filament (hot-wire) temperatures.…”