Photoluminescence of porous gallium arsenide

Goryachev, D. N.

doi:10.1134/1.1187293

Cited by 18 publications

(10 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The role of quantum-dimensional effects in the formation of the photoluminescence (PL) spectrum was proved by the example of por-Si. Recently, it is possible to create similar porous nanostructured layers on binary and more complex materials that already have pronounced luminescent properties [1][2][3]. The simplest and most cost-effective approach to creating porous structures is the electrochemical etching of single-crystal or polycrystalline plates.…”

Section: Introductionmentioning

confidence: 99%

Luminescent Properties of Electrochemically Etched Gallium Arsenide

Gavrilchenko¹,

Milovanov²,

Ivanov³

et al. 2021

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

The paper presents the results of structural and photoluminescent (PL) studies of porous GaAs layers created by electrochemical etching of GaAs wafers. Structural and morphological properties of porous GaAs were analyzed by SEM and Auger spectroscopy. The analysis of SEM images shows the presence of meso-and macropores and nanocrystallites in the porous layer. Some samples have the pyramidal formations on the surface. Auger spectra of crystalline and porous GaAs show different stoichiometry of the samples. The photoluminescence of the formed material is characterized by the emission band in the region of 1.5-3.2 eV, and the dependence of the PL spectrum on the wavelength of exciting light is observed. As the wavelength of the exciting light increases, the maxima of the emission spectra shift to the region of lower energies. This behavior of the PL spectrum (shift of the PL maximum depending on the wavelength of excitation emission) is characteristic of heterogeneous in thickness electrochemically etched porous structures. The nature of the multiband PL spectrum of porous GaAs can be explained by the existence of hydrated oxides of arsenic and gallium on the surface of the samples and the formation of nanocrystallites in the porous layers of GaAs. The article presents an estimation of the possible sizes of nanocrystallites under the assumption that PL is created due to quantum-dimensional effects.

show abstract

Section: Introductionmentioning

confidence: 99%

Luminescent Properties of Electrochemically Etched Gallium Arsenide

Gavrilchenko¹,

Milovanov²,

Ivanov³

et al. 2021

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

show abstract

“…For III-V semiconductors pore formation occurs beyond a critical breakdown potential (U bd ). This has been examined mainly for GaP and GaAs in halogenic acids [18][19][20][21][22][23][24][25][26][27][28][29]. Research on InP has increased more and more in recent years as a result of an early report in 1960 that crystallographic etch features develop on the surface after etching in acidic electrolytes [33].…”

Section: Introductionmentioning

confidence: 99%

Electrochemical structuring of mechanically activated n‐InP(100) surfaces

Hueppe

Schlierf

Gassiloud

et al. 2005

phys. stat. sol. (c)

View full text Add to dashboard Cite

Localized pore formation on n-InP(100) surfaces under anodic polarization in 1M HCl were created and controlled by a two steps approach. First, scratches in the nanometer scale have been applied mechanically, using a Nano-Indenter. These scratches represent activated sites for pore growth due to their lowered electrochemical pore formation potential (U bd,activated ), which is significantly cathodic to the formation potential on intact surfaces U bd (U bd,intact ). Thus, a potential window can be defined between U bd,activated and U bd,intact , where anodic polarization in 1M HCl leads to selective pore formation follows, at a potential that is inside those window. Characterization by scanning electron microscopy shows that pore formation occurs only at the activated sites. Furthermore, both broadening and morphology of the pores depend strongly on the force load during the scratching process. Analysis of the scratched surface has been carried out before and after etching, using atomic force microscopy (AFM). The results clearly show that the porous region is significantly wider than the originally scratched region -this can be ascribed to dislocation formation in the vicinity of the scratch.

show abstract

“…[8,9]. In recent years, also the porosification of III-V compounds has gained new impetus, especially on GaP [10][11][12][13][14][15], GaAs [16][17][18][19][20][21][22][23][24][25] and InP [26][27][28][29][30][31][32][33][34][35][36][37][38]. The investigation of pore formation on III-V compounds is mainly restricted to n-type materials; only Schmuki et al [18] has reported that under certain circumstances pores can be triggered on p-type GaAs.…”

Section: Introductionmentioning

confidence: 99%

Pore formation on p‐type InP(100)

Schlierf

Lockwood

Graham

et al. 2005

Physica Status Solidi (a)

View full text Add to dashboard Cite

PACS 81.05. Ea, 82.45.Vp The present work deals with anodization processes of p-type InP(100) in different halogenic acids. The morphology of the attack depends strongly on the electrochemical conditions and the type of anion present in the electrolyte. Only electropolishing was observed in HCl while the formation of a porous oxide layer was obtained in HF. In HBr, however, pore growth into the bulk material can be achieved.

show abstract

Photoluminescence of porous gallium arsenide

Cited by 18 publications

References 0 publications

Luminescent Properties of Electrochemically Etched Gallium Arsenide

Luminescent Properties of Electrochemically Etched Gallium Arsenide

Electrochemical structuring of mechanically activated n‐InP(100) surfaces

Pore formation on p‐type InP(100)

Contact Info

Product

Resources

About