Photoluminescence of polycrystalline zinc oxide co-activated with trivalent rare earth ions and lithium. Insertion of rare-earth ions into zinc oxide

Bachir, S.; Azuma, Kazufumi; Kossanyi, J.; Valat, P.; Ronfard-Haret, J.C.

doi:10.1016/s0022-2313(97)00093-8

Cited by 139 publications

(83 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Since it was experimentally observed that the rare earth luminescence efficiency at room temperature increases with the band gap of the semiconductor [2], wide band gap materials such as GaN are especially promising for possible applications. Rare earth luminescence from Nd, Sm, Eu, Tb, Dy, Ho, Er and Tm has also been reported in the hexagonal II-VI semiconductor ZnO [3][4][5][6][7][8][9][10][11][12]. Interest in zinc oxide has recently increased due to the fact that its structural and semiconducting properties are similar to hexagonal GaN, but that, in comparison to GaN, highquality single crystals of ZnO are easier to grow [13].…”

Section: Cern-ep Ch-1211 Geneva 23 Switzerlandmentioning

confidence: 99%

“…Several methods for producing RE-doped ZnO have been described in the literature, including sintering [3][4][5], wet-chemical synthesis [6,11], laser ablation [7][8][9][10] and co-deposition following evaporation [12]. However, all these methods result in polycrystalline samples, and there exists evidence that the rare earths accumulate at the grain boundaries of polycrystalline ZnO [4]. Ion implantation, on the other hand, which is a widely used method in semiconductor technology for doping single crystals, has so far not been investigated for rare earth doping of ZnO.…”

Section: Cern-ep Ch-1211 Geneva 23 Switzerlandmentioning

confidence: 99%

“…Several methods for producing RE-doped ZnO have been described in the literature, including sintering [3][4][5], wet-chemical synthesis [6,11], laser ablation [7-10] and co-deposition following evaporation [12]. However, all these methods result in polycrystalline samples, and there exists evidence that the rare earths accumulate at the grain boundaries of polycrystalline ZnO [4].…”

mentioning

confidence: 99%

See 2 more Smart Citations

Implantation site of rare earths in single-crystalline ZnO

Wahl¹,

Rita²,

Correia³

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

The lattice location of rare earth 167m Er in single-crystalline hexagonal ZnO was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope 167 Tm at doses of 1.3−2.8×10 13 cm −2 and annealing up to 900°C, the angular distribution of conversion electrons emitted by the radioactive isotope 167m Er was measured by a position-sensitive electron detector . Interest in zinc oxide has recently increased due to the fact that its structural and semiconducting properties are similar to hexagonal GaN, but that, in comparison to GaN, highquality single crystals of ZnO are easier to grow [13].In analogy with GaN, where the optically active sites of rare earths are considered to be substitutional Ga sites [14,15], optical activity of Er in ZnO is likely to be associated with REs occupying substitutional Zn sites. Several methods for producing RE-doped ZnO have been described in the literature, including sintering [3][4][5], wet-chemical synthesis [6,11], laser ablation [7-10] and co-deposition following evaporation [12]. However, all these methods result in polycrystalline samples, and there exists evidence that the rare earths accumulate at the grain boundaries of polycrystalline ZnO [4]. Ion implantation, on the other hand, which is a widely used method in semiconductor technology for doping single crystals, has so far not been investigated for rare earth doping of ZnO.In this letter we report on the lattice location of ion implanted rare earth atoms in single-crystalline hexagonal ZnO using the emission channeling technique [16]. For that purpose we have measured the angular distribution of conversion electrons emitted by the radioactive isotope 167m Er (t 1/2 = 2.27 s) following implantation of the precursor isotope 167 Tm (t 1/2 = 9.25 d). The recoil energy of the 167 Tm → 167m Er decay is 0.7-0.9 eV only, indicating that the 167m Er lattice site is inherited from 167 Tm. We have already applied this method to study the lattices sites of In order to identify the lattice sites of Er, we have compared the experimental channeling yields to simulated patterns for 167m Er emitter atoms on substitutional Zn sites (S Zn ) and substitutional O sites (S O ) with varying root mean square (rms) displacements. Besides, we also considered a large variety of interstitial sites the location of which has been described in Ref. The electron channeling simulations were carried out with the "many beam" formalism using a number of 20 beams, i.e. representing the electron wave functions by 21×21 Fourier components. In order to describe the crystal structure of ZnO, we adopted two different structural models. While in both models lattice constants of a = 3.2495 Å and c = 5.2069 Å [22] were used, the first approach assumed the Zn-O c-axis bond length to be z = 0.375 c, as in an ideal wurtzite structure. In addition, this approach used isotropic root mean square (rms) displacements of u 1 (Zn) = 0.082 Å and u 1 (O) = 0.085 Å [23], which would correspond to Debye temperatur...

show abstract

Section: Cern-ep Ch-1211 Geneva 23 Switzerlandmentioning

confidence: 99%

Section: Cern-ep Ch-1211 Geneva 23 Switzerlandmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Implantation site of rare earths in single-crystalline ZnO

Wahl¹,

Rita²,

Correia³

et al. 2003

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Transition-metal-or rare-earth-doped ZnO has been used as an effective phosphor material for a long time [2]. The impurities, introduced into the ZnO nanostructures, can modulate the local structure and cause the dramatic change of photoelectric and vibrational properties due to the quantum confinement effect [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature growth and optical properties of Ce-doped ZnO nanorods

Xia¹,

Hu²,

Zhou³

2013

Journal of Experimental Nanoscience

View full text Add to dashboard Cite

Ce-doped ZnO nanorod arrays were grown on zinc foils by a hydrothermal method at 180 � C. The effects of Ce-doping on the structure and optical properties of ZnO nanorods were investigated in detail. The characterisation of the rod array with X-ray diffraction and X-ray photoelectron spectroscopy indicated that Ce 3þ ions were incorporated into the ZnO lattices. There were no diffraction peaks of Ce or cerium oxide in the pattern. From UV-Vis spectra, we observed a red shift in the wavelength of absorption and decreased band gap due to the Ce ion incorporation in ZnO. The photoluminescence integrated intensity ratio of the UV emission to the deep-level green emission (I UV /I DLE ) was 1.25 and 2.87, for ZnO and Ce-doped ZnO nanorods, respectively, which shows a great promise for the Ce-doped ZnO nanorods with applications in optoelectronic devices.

show abstract

“…Rare earth doping of ZnO during growth has already been described previously in the literature [3][4][5][6][7][8][9][10]. However, the production of doped layers by ion implantation, the main doping technique used in semiconductor technology, has not been exploited to a great extent.…”

Section: Introductionmentioning

confidence: 99%

Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

et al. 2002

View full text Add to dashboard Cite

In this work we report on the lattice site location of rare earths in single-crystalline ZnO by means of the emission channeling (EC) technique. Following low dose (3×10 13 at/cm 2 ) 60 keV ion implantation of the precursor isotope 169 Yb, a position-sensitive electron detector was used to monitor the angular distribution of the conversion electrons emitted from 169 Tm * as a function of the annealing temperature up to 600ºC in vacuum. An additional annealing at 800ºC in flowing O 2 was performed. The EC measurements revealed that around 95-100% of the rare earth atoms occupy substitutional Zn sites up to an annealing temperature of 600ºC/vacuum. After the 800ºC/O 2 annealing, the emission channeling effects decreased considerably.

show abstract

Photoluminescence of polycrystalline zinc oxide co-activated with trivalent rare earth ions and lithium. Insertion of rare-earth ions into zinc oxide

Cited by 139 publications

References 26 publications

Implantation site of rare earths in single-crystalline ZnO

Implantation site of rare earths in single-crystalline ZnO

Low-temperature growth and optical properties of Ce-doped ZnO nanorods

Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

Contact Info

Product

Resources

About