Photoluminescence of PbS quantum dots on semi-insulating GaAs

Ullrich, Bruno; Xiao, X.; Brown, Gail J.

doi:10.1063/1.3460150

Cited by 23 publications

(26 citation statements)

References 15 publications

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“…The thickness of the film can be varied by changing the concentrations or the volume of the nanoparticle solution. The surface morphology of these films is comparable to the PbS QD arrays achieved by a sc-CO 2 fluid deposition process (Smetana et al 2008;Wang et al 2010) including those reported on a GaAs substrate (Ullrich et al 2010). In general, the images of the Au and PbS NP films deposited by the CDM procedure reveal fairly homogenous coverage on different substrates.…”

Section: Deposition Of Au and Pbs Nps Using Cdm Methodssupporting

confidence: 53%

Nanoparticle film deposition using a simple and fast centrifuge sedimentation method

et al. 2014

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Colloidal nanoparticles (NPs) can be deposited uniformly on flat or rough and uneven substrate surfaces employing a standard centrifuge and common solvents. This method is suitable for depositing different types of nanoparticles on a variety of substrates including glass, silicon wafer, aluminum foil, copper sheet, polymer film, plastic, and paper, etc. The thickness of the films can be controlled by the amount of the colloidal nanoparticle solution used in the preparation. The method offers a fast and simple procedure compared to other currently known nanoparticle deposition techniques for studying the optical properties of nanoparticle films.

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Section: Deposition Of Au and Pbs Nps Using Cdm Methodssupporting

confidence: 53%

Nanoparticle film deposition using a simple and fast centrifuge sedimentation method

et al. 2014

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“…5,24 The fit result for θ D is substantially smaller than the value of 145 K in bulk PbS obtained from x-ray Bragg reflection. 25 Other reports provide values in the range of 75-300 K. 26,27 It should be mentioned that other samples prepared with different annealing conditions also show low θ D values but reach maximum values of up to 82 K.…”

Section: A Characterization By Absorption and Ss-pl Spectramentioning

confidence: 92%

Spontaneous and stimulated emission dynamics of PbS quantum dots in a glass matrix

2013

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Optical properties and relaxation mechanisms of PbS quantum dots in glass matrix (PbS:Glass) have been systematically investigated by transmission and (steady-state and transient) photoluminescence spectroscopy. Key parameters are determined by combining the data with semiempirical expressions, based on which the recombination mechanisms including spontaneous and stimulated emissions have been discussed as a function of temperature by referring to a multilevel model including intrinsic (or band-to-band transition), bright, dark, and ground states. The results disclose that (i) the existence of a dark exciton state is the main reason for thermal quenching of the emission even at low temperatures due to the strong multiacoustic phonon coupling, (ii) the "intrinsic" spontaneous emission related to the intrinsic state is observed with an approximately nanosecond lifetime, in contrast to the "regular" spontaneous emission from the bright exciton state with an approximately microsecond lifetime, and (iii) stimulated emission, which has a lifetime of 20-40 ps and shows power-dependence of excitation density (or temperature), only appears from the intrinsic state but not the (bright) exciton state when enough accumulation of photogenerated carriers is reached. Furthermore, we find that the thermal conductivity will become crucial for future PbS:Glass related optoelectronic device applications.

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“…A PL peak of about 430 nm is associated with the transition of electrons from the conduction band edge to holes trapped in interstitial Pb 2+ sites. The PL intensity is much higher for PbS films than for the Si(1 0 0) substrate because the temperature of the carrier in the latter case increases [17]. Figure 7(b) shows the PL spectra of PbS film deposited at t = 2 h and at 25, 45 and 65°C and an excitation wavelength of 335 nm.…”

Section: Photoluminescencementioning

confidence: 94%

“…A variety of approaches have been proposed for silicon-based light-emitting structures. The quantum confinement of carriers in nanostructured silicon systems and deposition of semiconductor NCs on a Si substrate are interesting research areas [16,17,29]. Figure 7(a) shows the PL spectra for the Si(1 0 0) substrate and PbS nanostructured thin films on a Si(1 0 0) substrate at an excitation wavelength of 335 nm.…”

Section: Photoluminescencementioning

confidence: 99%

“…Kaci et al [15,16] investigated the effect of polyethylene glycol 300, polyethylene oxide and isopropyl alcohol on the PL properties of PbS thin film grown on Corning glass and Si(1 0 0) substrates. Ullrich et al [17] studied the PL spectra of PbS QD deposited on a GaAs substrate. Triethanolamine (TEA) has been used as a complexing agent in chemical methods to obtain nanocrystalline film [5,6,18].…”

Section: Introductionmentioning

confidence: 99%

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Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

Tohidi

Jamshidi‐Ghaleh

2014

Philosophical Magazine

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PbS nanocrystalline thin film was prepared by chemical bath deposition on Si (1 0 0) substrate at bath temperatures of 25, 45 and 65°C. Triethanolamine was added to the aqueous solution, which decreased the grain size and increased the luminescence of the nanocrystalline PbS thin film. PbS nanocrystals were identified using XRD, TEM and AFM. The crystalline size of the PbS film deposited at different bath temperatures was estimated by XRD and TEM to be 7-12 nm. The growth mechanism of the PbS crystallites were described at different bath temperatures. The confinement was reflected in the absorption spectra, photoluminescence excitation and photoluminescence spectra. The luminescence of Si(1 0 0) substrate and PbS nanocrystalline film deposited on Si(1 0 0) were compared, and the results revealed that the PbS nanocrystals altered and notably enhanced the emission features of the Si(1 0 0) substrate. The shifting of the maximum photoluminescence emission wavelength of PbS nanocrystals with a change in bath temperature and the variation in photoluminescent intensity of PbS nanocrystals prepared at 25°C versus deposition time were investigated. A single-peak fit of a Gaussian function was employed to discern the photoluminescence of PbS on Si(1 0 0) substrate.

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Photoluminescence of PbS quantum dots on semi-insulating GaAs

Cited by 23 publications

References 15 publications

Nanoparticle film deposition using a simple and fast centrifuge sedimentation method

Nanoparticle film deposition using a simple and fast centrifuge sedimentation method

Spontaneous and stimulated emission dynamics of PbS quantum dots in a glass matrix

Optical and structural properties of nanocrystalline PbS thin film grown by CBD on Si(1 0 0) substrate

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