Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

Abstract

InGaN single-crystal films were grown on (0001) plane sapphire substrates at 800 °C by metalorganic vapor phase epitaxy. By using such a high temperature for growth, the crystalline quality has been greatly improved. But a high nitrogen over pressure and high indium source flow rate were necessary to achieve significant indium incorporation during growth. For the first time, photoluminescence has been observed in InGaN, and near-band edge emission is seen in the photoluminescence at 77 K. From this photoluminescence, the dependence of a near-band edge emission on the indium mole fraction of InGaN has been investigated.

Stimulated Formation of InGaN Quantum Dots

“…Absolute In content at such growth method may be also changed by TMIn/TMGa ratio. For the investigated regimes it even stronger influence indium content than growth temperature (fig 1) which is in a good agreement with results of other works (Bedair et al, 1997;Schenk et al, 1999;Yoshimoto et al, 1991 ).…”

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

“…A large difference between solid composition and vapor phase composition were reported when high-quality InGaN layers were grown at 800 C by MOVPE. 40) All the InGaN layers with various solid compositions grown at 550 C in this study have sufficiently good crystalline quality to emit strong PL at 77 K, which will be shown later in this section. The easy control of InGaN solid composition is another advantage of the RF-MBE growth method.…”

A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications

“…The conditions resulted in 2D epitaxial growth at rates of 1-2 µm/hr. InGaN growth was conducted in a manner similar to Yoshimoto at temperatures from 725°C to 800°C [12].…”

“…While a ratio of TMI to TMGa of 10 is necessary to achieve the desired InGaN alloy compositions, it is possible to directly deposit high quality InGaN by MOVPE [12]. Using these methods, blue and green LED's have been commercially produced by MOVPE [5].…”