Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

10.1007/s11453-008-1015-z

“…In the long-wavelength laser structures ( λ = 1.88 µ m), the experimental value of internal optical losses was reduced to 1 cm -1 (Fig. 2), which is comparable to the value of internal optical losses at the oscillations' threshold for lasers with the wavelength of 1.04 µ m. In the continuous-wave [9,10] and pulsed [2] modes of oscillations at high excitation levels, the optical-radiation power of the lasers with the wavelength of 1.75-1.88 µ m is several times lower than that of the shortwavelength ( λ = 1.04 µ m) lasers [1,[3][4][5][6][7][8]. In Fig.…”

“…According to the data reported in [19,20], the rates of nonradiative and radiative spontaneous recombination are defined as (4) where C is the coefficient of Auger recombination; B is the coefficient of radiative spontaneous recombination; and n and p are the concentrations of electrons and holes in the active region, respectively.…”

“…Our recent studies [1,[3][4][5] showed that the chargecarrier concentration increases in the active region of a semiconductor laser beyond the lasing threshold at a high level of current pumping. The increase in concentration sets in when the rate of stimulated recombination becomes equal to the rate of energy relaxation of electrons in a quantum well of the active region.…”