Photoluminescence of GeO2 films containing germanium nanocrystals

Володин, В. А.; Gorokhov, E. B.; Efremov, M. D.; Marin, D. V.; Orekhov, D. A.

doi:10.1134/1.1587174

Cited by 17 publications

(5 citation statements)

References 9 publications

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“…The peak broadening (fwhm, ∼12.2 cm -1 ) in the NWs sample is possibly an influence of strain caused by dimensional confinement. The Raman frequency dispersion of the Ge NWs samples is narrower than that reported by Volodin 33 on Ge nanocrystals, which indicates the high crystallinity and nearly perfect crystal structure of the Ge nanowires grown by CVD.…”

Section: Resultsmentioning

confidence: 52%

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂]

et al. 2004

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High-yield synthesis of germanium nanowires (NWs) and core−shell structures is achieved by the chemical vapor deposition (CVD) of dicyclopentadienyl germanium ([Ge(C5H5)2]). The one-dimensional (1D) nanostructures are formed on an iron substrate following a base-growth model in which an Fe−Ge epilayer functions as a catalytic bed. The wire growth is selective and no catalyst particles are observed at the tip of the NWs, which is contrary to the characteristic feature of a 1D growth based on the vapor−liquid−solid (VLS) mechanism. The diameter and length of the NWs were in the ranges 15−20 nm and 25−40 μm, respectively, as found by high-resolution electron microscopy. Both axial and radial dimensions of the NWs can be controlled by adjusting the precursor feedstock, deposition temperature, and size of alloy nuclei in the Fe−Ge epilayer. High precursor flux produced coaxial heterostructures where single-crystalline Ge cores are covered with an overlayer of nanocrystalline Ge. Single-crystal Ge nanowires exhibit a preferred growth direction [112̄] confirmed by X-ray and electron diffraction patterns. When compared to bulk Ge, the micro-Raman spectra of Ge NWs show a low field shift, probably due to the dimensional confinement. Patterned growth of Ge NWs was achieved by shadow-masking the Fe substrate with a carbon film, which prevents the formation of Fe−Ge nuclei, thereby inhibiting the nanowire growth.

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Section: Resultsmentioning

confidence: 52%

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂]

et al. 2004

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“…Figure S2 shows that the finger-print of Ge (~ 300 cm -1 ) is also found in the spectrum of Ge/SiC x N y sample and the peak width of Ge/SiC x N y wires is comparable to the Ge standards. 1,2 In order to study the growth mechanism of Ge/SiC x N y NWs, the CVD deposition on the sapphire (0001) was performed which the substrate was scraped with diamond file. The SEM image (Fig.…”

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confidence: 99%

One-Step Chemical Vapor Growth of Ge/SiC_xN_y Nanocables

et al. 2007

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Single-step synthesis of one-dimensional Ge/SiCxNy core-shell nanocables was achieved by chemical vapor deposition of the molecular precursor [Ge{N(SiMe3)2}2]. Single crystalline Ge nanowires (diameter approximately 60 nm) embedded in uniform SiCxNy shells were obtained in high yields, whereby the growth process was not influenced by the nature of substrates. The shell material exhibited high oxidation and chemical resistance at elevated temperatures (up to 250 degrees C) resulting in the preservation of size-dependent semiconductor properties of germanium nanowires, such as intact transport of charge carriers and reduction of energy consumption, when compared to pure Ge nanowires.

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“…These nanocrystals are embedded in an insulating matrix which is usually chosen to be silica 4,5,6,7 . However, other wide bandgap materials are also employed such as germania 8,9 , silicon nitride 10,11,12 , and alumina 13,14,15 . As a matter of fact, the effect of different host matrices is an active research topic in this field.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Sevik

Bulutay

2007

J Mater Sci

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An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO2, GeO2, Al 2O3, Si3N4, and Ge3N 4. Their important polymorphs are considered which are for SiO 2: α-quartz, α- and β-cristobalite and stishovite, for GeO2: α-quartz, and rutile, for Al2O 3: α-phase, for Si3N4 and Ge 3N4: α- and β-phases. This work constitutes a comprehensive account of both electronic structure and the elastic properties of these important insulating oxides and nitrides obtained with high accuracy based on density functional theory within the local density approximation. Two different norm-conserving ab initio pseudopotentials have been tested which agree in all respects with the only exception arising for the elastic properties of rutile GeO2. The agreement with experimental values, when available, are seen to be highly satisfactory. The uniformity and the well convergence of this approach enables an unbiased assessment of important physical parameters within each material and among different insulating oxide and nitrides. The computed static electric susceptibilities are observed to display a strong correlation with their mass densities. There is a marked discrepancy between the considered oxides and nitrides with the latter having sudden increase of density of states away from the respective band edges. This is expected to give rise to excessive carrier scattering which can practically preclude bulk impact ionization process in Si3N4 and Ge3N4. © Springer Science+Business Media, LLC 2007

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Photoluminescence of GeO2 films containing germanium nanocrystals

Cited by 17 publications

References 9 publications

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂]

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂]

One-Step Chemical Vapor Growth of Ge/SiC_xN_y Nanocables

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

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Photoluminescence of GeO2 films containing germanium nanocrystals

Cited by 17 publications

References 9 publications

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C5H5)2]

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C5H5)2]

One-Step Chemical Vapor Growth of Ge/SiCxNy Nanocables

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Contact Info

Product

Resources

About

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂]

Germanium Nanowires and Core−Shell Nanostructures by Chemical Vapor Deposition of [Ge(C₅H₅)₂]

One-Step Chemical Vapor Growth of Ge/SiC_xN_y Nanocables