Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (118) surface

Serpentini, M.; Souifi, Abdelkader; Abdallah, M; Berbezier, I.; Brémond, G.

doi:10.1016/s0022-2313(98)00165-3

Cited by 2 publications

(4 citation statements)

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“…The results reported in the literature for quantum dots grown on Si(100) substrates show a 2D/3D changeover corresponding to a Ge coverage between 3 and 4 ML [132]. In order to investigate the influence of the substrate orientation on the 2D/3D SK growth mode changeover, we compare PL measurements performed on Si/Ge/Si 0.7 Ge 0.3 /Si(100) and Si/Ge/Si 0.7 Ge 0.3 /Si(118) structures (figure 44).…”

Section: Influence Of Substrate Misorientationmentioning

confidence: 91%

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SiGe nanostructures: new insights into growth processes

Berbézier

Ronda

Portavoce

2002

J. Phys.: Condens. Matter

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During the last decade, Si/Si 1−x Ge x heterostructures have emerged as a viable system for use in CMOS technology with the recent industrial production of heterojunction bipolar transistor-based integrated circuits. However, many key problems have to be solved to further expand the capabilities of this system to other more attractive devices. This paper gives a comprehensive review of the progress achieved during the last few years in the understanding of some fundamental growth mechanisms. The discrepancies between classical theories (in the framework of continuum elasticity) and experimental results are also specially addressed. In particular, the major role played by kinetics in the morphological evolution of layers is particularly emphasized. Starting from the unexpected differences in Si 1−x Ge x morphological evolution when deposited on (001) and on (111), our review then focuses on: (1) the strain control and adjustment (from fully strained to fully relaxed 2D and 3D nanostructures)in particular, some original examples of local CBED stress measurements are presented; (2) the nucleation, growth, and self-assembly processes, using self-patterned template layers and surfactant-mediated growth; (3) the doping processes (using B for type p and Sb for type n) and the limitations induced by dopant redistribution during and after growth due to diffusion, segregation, and desorption. The final section will briefly address some relevant optical properties of Si 1−x Ge x strained layers using special growth processes.(Some figures in this article are in colour only in the electronic version) (HBT). The main reason is that it presents a minimum additional cost to CMOS and a very simple design with a narrow Si 1−x Ge x base layer inserted into a bipolar BiCMOS fabrication process. However, even if this technology is quite mature, the device characteristics obtained in production lines are much less good than those demonstrated for research devices. This result has not been explained so far, but the high thermal budget, used in present CMOS production, is assumed to have the major detrimental effect. Indeed, it causes strain relaxation (by dislocation nucleation and also by interdiffusion of Si/Si 1−x Ge x ), dopant diffusion, interface roughening, and Ge clustering. All these phenomena are well known to degrade the electrical properties of HBTs.Recent research developments also focus on other attractive devices such as the p-type Si 1−x Ge x MOSFET, since p channels represent so far the major limiting factor in CMOS performance. Indeed, the mobility of Si 1−x Ge x p MOSFET is only 20% larger than those of conventional transistors. This is attributed to parallel conduction due to the small band offset of Si 1−x Ge x channels that contain low Ge content. Further improvements would then rely on an increase of the Ge content to increase the band offset. This is expected to give stronger transfer and confinement of the carriers, preventing parallel conduction from taking place. However, this faces serious problems, since a...

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Section: Influence Of Substrate Misorientationmentioning

confidence: 91%

“…In this section, three main features are discussed: the influence of surface misorientation, the influence of growth temperature (when the substrate is misoriented), and the influence of a two-step process using a self-patterned Si 0.7 Ge 0.3 template layer to organize the Ge dots [132,133].…”

Section: Doping Controlmentioning

confidence: 99%

SiGe nanostructures: new insights into growth processes

Berbézier

Ronda

Portavoce

2002

J. Phys.: Condens. Matter

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“…Dependable and inexpensive methods for the nanostructuring of two-dimensional surfaces will be the key to novel advanced technologies of the next millennium such as RAM chips of highest data storage capacity and nanodiodes , for the development of superfast computers, or nanosensor arrays for the analysis of messenger substances in living cells. , The formation and properties of self-assembled nanostructures made from proteins can be designed according to nano-engineering specifications by site-directed mutagenesis. Therefore, different deposition techniques were employed to obtain well-ordered structures of proteins at surfaces. − S-layer proteins have a large potential in nanotechnology. − They form highly ordered two-dimensional protein crystals at surfaces, but they are not able to form channels and thus they cannot shield the synthesized nanostructures from a hydrophilic environment.…”

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Nanostructuring by Deposition of Protein Channels Formed on Carbon Surfaces

et al. 2002

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The unique stability and self-assembling properties of MspA, a channel protein from Mycobacterium smegmatis, were exploited for a simple and straightforward nanostructuring process. Deposition of buffer droplets containing MspA onto highly ordered pyrolitic graphite (HOPG), followed by thermal curing and high vacuum treatment, yielded three distinct lateral nanostructures, depending upon the deposition conditions. The determining experimental parameters were the protein mass deposited and the temperature during and after deposition. The nanostructures were analyzed using high-resolution transmission (TEM) and raster electron microscopy (REM). The program IMAGE (NIH/USA) yielded a quantitative insight into the geometries and the ordering principles of three lateral nanostructures engineered. Whereas phase I consisted of individual proteins, deposited on HOPG, phase II was found to be a nanostructured supramolecular assembly of protein monomers. Phase III, however, featured arrays of distinct nanochannels, which were formed in analogy to the reconstitution process of MspA within lipid membranes. We believe this discovery possesses a great prospect for the generation of nanostructures in the fields of computer science and medicine.Dependable and inexpensive methods for the nanostructuring of two-dimensional surfaces will be the key to novel advanced technologies of the next millennium such as RAM chips of highest data storage capacity 1 and nanodiodes 2,3 for the development of superfast computers, or nanosensor arrays for the analysis of messenger substances in living cells. 4,5 The formation and properties of self-assembled nanostructures made from proteins can be designed according to nanoengineering specifications by site-directed mutagenesis. Therefore, different deposition techniques were employed to obtain well-ordered structures of proteins at surfaces. 6-8 S-layer proteins have a large potential in nanotechnology. 9-11 They form highly ordered two-dimensional protein crystals at surfaces, but they are not able to form channels and thus they cannot shield the synthesized nanostructures from a hydrophilic environment. The latter is often required in electrochemical sensing applications and during the electrochemical deposition of quantum dots in preformed nanotemplates. 12 Porins from E. coli or other Gram-negative bacteria are stable channel-forming proteins, but they dissociate into inactive monomers above temperatures of 55 to 70°C. 13,14 We used MspA, the main porin of Mycobacterium smegmatis 15,16 for nanostructuring of two-dimensional surfaces, because it is the most stable channel-forming protein known so far. It is able to retain its structure and its channel function up to temperatures of 100°C. 17 Furthermore, MspA shows an amazing tendency to self-assemble into ordered structures. This was previously demonstrated on liquid-air interfaces. 18 This principally permits the synthesis of twodimensional nanoarrays. To the best of our knowledge, there are no attempts to use bacterial channel proteins or t...

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Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (118) surface

Cited by 2 publications

References 9 publications

SiGe nanostructures: new insights into growth processes

SiGe nanostructures: new insights into growth processes

Nanostructuring by Deposition of Protein Channels Formed on Carbon Surfaces

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