2022
DOI: 10.1016/j.jlumin.2022.119167
|View full text |Cite
|
Sign up to set email alerts
|

Photoluminescence of Europium in ZnO and ZnMgO thin films grown by Molecular Beam Epitaxy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
11
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 12 publications
(14 citation statements)
references
References 38 publications
0
11
0
Order By: Relevance
“…In our previous investigation, we found that the Eu luminescence efficiency is an order of magnitude higher in Eu-doped ZnMgO with around 10% fractional Mg content in comparison to Eu-doped ZnO matrix and that thermal annealing in oxygen ambient stimulates the emission from Eu 3+ in ZnO. 30 Other studies in nitride semiconductors have shown that the presence of oxygen and Mg in GaN:Eu greatly enhances the efficiency of the red emission of Eu 3+ ions. 39 This observation makes ZnMgO:Eu a natural material choice for efficient red emission.…”
Section: Introductionmentioning
confidence: 90%
See 2 more Smart Citations
“…In our previous investigation, we found that the Eu luminescence efficiency is an order of magnitude higher in Eu-doped ZnMgO with around 10% fractional Mg content in comparison to Eu-doped ZnO matrix and that thermal annealing in oxygen ambient stimulates the emission from Eu 3+ in ZnO. 30 Other studies in nitride semiconductors have shown that the presence of oxygen and Mg in GaN:Eu greatly enhances the efficiency of the red emission of Eu 3+ ions. 39 This observation makes ZnMgO:Eu a natural material choice for efficient red emission.…”
Section: Introductionmentioning
confidence: 90%
“…The high proportion of Eu 3+ in the O2.5 sample is evidence that the oxygen-rich environment promotes the formation of trivalent europium in ZnMgO alloys. 30 Figure 3a , where the standard "c" lattice parameter for unstrained wurtzite ZnO,c 0 = 5.205 Å. 46,47 Figure 3b presents the Zn 1−x Mg x O:Eu thin films' c-lattice parameters as a function of the fractional Mg content.…”
Section: Structural and Compositional Characteristicsmentioning
confidence: 99%
See 1 more Smart Citation
“…At present, ZnMgO/ZnO heterostructures are mainly prepared by MBE [5][6][7] , PLD or MOCVD techniques, and S. Krishnamoorthy [8] et al used PLD epitaxial growth technique to grow ZnMgO/ZnO/ZnMgO double-barrier heterojunction barrier heterojunctions on sapphire c-plane substrates and observed the resonant tunneling effect. Some domestic units have also started to investigate ZnMgO/ZnO heterojunctions.…”
Section: Introductionmentioning
confidence: 99%
“…To date, various physical and chemical preparation techniques have been used to synthesize ZnO thin films, including chemical vapor deposition [14], pulsed-laser deposition (PLD) [15], glancing angle deposition (GLAD) technique [16], sputtering [17], spray pyrolysis technique [18], electron beam evaporation [19], molecular beam epitaxy [20] and sol-gel deposition [21]. Among these deposition methods, sol-gel dip coating is a versatile and inexpensive method for fabricating thin films [22].…”
Section: Introductionmentioning
confidence: 99%