Photoluminescence of CdTe doped with arsenic and antimony acceptors

Soltani, M.; Certier, M.; Evrard, R.; Kartheuser, E.

doi:10.1063/1.359686

Cited by 77 publications

(75 citation statements)

References 44 publications

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“…In addition, an increase of the excitation intensity slightly reduces the value of S. Indeed, at higher excitation intensities closer DAP are involved in the radiative recombination. This behaviour is corroborated by expression (3) using a DA charge distribution similar to that in reference [8].…”

supporting

confidence: 79%

“…The acceptor binding energy is close to the binding energy of nitrogen in ZnSe [12] whereas the donor binding energy is typical of the shallow donor in ZnSe, which is probably residual chlorine. From these results, the donor and acceptor radii are calculated including the central-cell correction [8]. This leads to the values r D 24 AE 0X5 A Ê and r A 5X8 AE 0X5 A Ê for the donor and acceptor radius, respectively, and to l D 1X046 and l A 0X904 for the parameters associated to the chemical shift in the case of the donor and of the acceptor, respectively.…”

mentioning

confidence: 99%

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Photoluminescence of Nitrogen-Doped ZnSe Layers

German

Kartheuser²,

Soltani³

et al. 1998

phys. stat. sol. (b)

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ZnSe layers have been epitaxially grown by MOVPE on GaAs substrates and were doped with nitrogen plasma. Photoluminescence measurements at different light intensities and in the temperature range of 4.2 K to 80 K have been performed on the layers. It is shown that the presence of nitrogen leads to photoluminescence spectra revealing acceptor-and donor-bound exciton lines, together with a donor±acceptor pair (DAP) band at 2.69 eV and a free-to-bound (FB) transition accompanied by their longitudinal-optical (LO) phonon side bands. A detailed and coherent analysis of the position, shape and relative intensities of the spectral lines is carried out by means of an analytical model correlating the position of the zero-phonon lines to the relative intensities of the phonon side bands. The model includes central-cell correction and describes the effect of the charge carrier LO-phonon interaction in the framework of the adiabatic approximation within the envelope function approach. The same model is successfully used to analyse the excitation intensity and temperature dependence of the zero-phonon lines associated to the DAP and FB transitions. Comparison between experiment and theory leads to the following physical parameters: S 0X5 AE 0X1 for the Huang-Rhys factor; E A 112 AE 2 meV, r A 5X8 AE 0X5 A Ê for the acceptor ionization energy and radius, respectively, and E D 25 AE 2 meV; r D 24 AE 0X5 A Ê for the donor ionization energy and radius, respectively.Introduction. As ZnSe-based compounds are of promising use for optoelectronic devices operating in the blue-green range of the spectrum, great effort has been put towards the development of both n-type and p-type doped ZnSe layers. Even though nitrogen still remains the most suited component for p-type doping [1] the concentration of electrically active dopants remains low, especially with the MOVPE growth process. The nature and electronic properties of the impurities present in those layers are therefore of particular interest. Photoluminescence (PL) experiments are widely used to assess the presence of impurities in semiconductors. In the present work, we perform a detailed study of the spectral position and the structure of the emission lines associated to the donor±acceptor pair (DAP) recombination process. We show that the shape of the DA band provides a correlation between the longitudinal optical (LO) phonon emission, the charge distribution and binding energies of the impurities and we also analyse the influence of the excitation intensity and the measurement temperature on the DAP emission.

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confidence: 79%

mentioning

confidence: 99%

Photoluminescence of Nitrogen-Doped ZnSe Layers

German

Kartheuser²,

Soltani³

et al. 1998

phys. stat. sol. (b)

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“…It should be noted that this energy is close to the energy of Ag acceptor center (107 meV) [44]. At the same time the acceptor energy is almost coincides with the energy of an A center where a Cd vacancy paired with a Cl donor, namely, (V Cd -Cl Te ) acceptor center (120 meV) [48,49]. Usually, emission of DAPs is accompanied by the presence of additional long-wavelength PL bands caused by the optical transitions with the participation of LO-phonons with the energy of 21 meV.…”

Section: Photoluminescence Of CD 1 à X Zn X Te Filmsmentioning

confidence: 92%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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“…N is a normalization factor and the variational parameter, l, is simply the average extension of this relative motion (pseudo-Bohr radius). We have calculated S within the adiabatic approximation [38,39], in which only the Frö hlich interaction of the exciton with LO phonons is considered since it is the strongest one among all interactions. The very small dispersion of Frö hlich interaction versus the angle with respect to the c-axis of the wurtzite crystal is neglected [40].…”

Section: Electric Field Versus Localizationmentioning

confidence: 99%

Carrier Dynamics in Group-III Nitride Low-Dimensional Systems: Localization versus Quantum-Confined Stark Effect

Lefèbvre

Taliercio

Kalliakos

et al. 2001

phys. stat. sol. (b)

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Continuous-wave and time-resolved optical spectroscopy is used to examine a variety of InGaN/GaN quantum-well and quantum-box samples, grown by molecular beam epitaxy. The results are analyzed in order to clarify the respective influences of electric fields and of carrier localizations on radiative recombinations. The coupling of electron-hole pairs with LO-phonons is also studied in detail, from careful analysis of the size-dependent intensities of LO-phonon replica. From our attempt of modelling the Huang-Rhys factor, S, for excitons in these systems, we conclude that the observed optical recombinations are rather those of electrons and holes separately localized on different potential fluctuations.Introduction All efficient light-emitting devices based on group-III nitride semiconductors involve low-dimensional systems, such as InGaN/GaN [1][2][3] or GaN/AlGaN [4] quantum wells (QWs). An intense research activity has been devoted recently to radiative recombinations in these artificial materials. For InGaN-based nanometric layers, large Stokes shifts have been readily assigned to strong carrier localization, possibly in self-formed quantum dots [5,6]. This idea was supported by observations of In-rich nanoclusters in InGaN layers. Although this clustering may depend on the growth conditions, the random distribution of In atoms induces rather strong potential fluctuations, in the volume of this ternary alloy. These fluctuations, together with large carrier effective masses in group-III nitrides, induce the localization of electron and hole wave-functions on nanometric scales, which prevents their efficient capture by nonradiative centers, related to the high density of threading dislocations. This localization was invoked to interpret (i) the strong Stokes shift between photoluminescence (PL) lines and the absorption onset of InGaN epilayers and QWs and (ii) the rather long PL decay times observed in these systems. Now, for all QWs based on nitrides in their wurtzite phase, including InGaN/GaN ones, electric fields of several hundred kV/cm are present, if the growth axis is (0001). Indeed, this symmetry permits spontaneous and piezoelectric polarizations which are specially strong for group-III nitrides [7,8]. These fields reduce drastically the oscillator strength for the ground-state optical transition, as evidenced [9, 10] by very large, sizedependent, recombination times. They are also partly at the origin of the Stokes shift observed in QWs [11].

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Photoluminescence of CdTe doped with arsenic and antimony acceptors

Cited by 77 publications

References 44 publications

Photoluminescence of Nitrogen-Doped ZnSe Layers

Photoluminescence of Nitrogen-Doped ZnSe Layers

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Carrier Dynamics in Group-III Nitride Low-Dimensional Systems: Localization versus Quantum-Confined Stark Effect

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