Photoluminescence mechanism for blue-light-emitting porous silicon

Qin, G. G.; Liu, X. S.; Y., S.; Lin, Jia; Yao, Guangqing; Lin, Xuelian; Lin, Kuixun

doi:10.1103/physrevb.55.12876

Cited by 69 publications

(37 citation statements)

References 21 publications

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“…The PL from the nanocables is believed to mainly originate from the luminescence centers, defects and impurities, in the SiO 2 shell. For the SiO 2 , the blue emission [15][16][17] and the near violet emission [17,18] are both considered from some luminescence centers.…”

Section: Methodsmentioning

confidence: 99%

Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

Ran

You

Dai

et al. 2004

Chemical Physics Letters

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Section: Methodsmentioning

confidence: 99%

Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

Ran

You

Dai

et al. 2004

Chemical Physics Letters

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“…[18] Efficient unpolarized polymer light-emitting diodes have also been constructed with PEDOT/PSS as a hole injection and transport layer. [19] As a class of photonic materials, monodisperse conjugated oligomers are characterized by a relatively short and uniform chain length, solubility and chemical purity, and ease of processing [20] with a potential for spontaneous uniaxial alignment mediated by nematic mesomorphism. Few existing conjugated oligomers are capable of forming glassy nematic films for polarized light emission with the exception of properly functionalized oligo(fluorene)s. [21] The potential of this material class has also been substantially enhanced with elevated glass transition and clearing temperatures while avoiding spontaneous crystallization normally encountered with low molecular mass organic materials.…”

Section: ±1mentioning

confidence: 99%

Strongly Polarized and Efficient Blue Organic Light‐Emitting Diodes Using Monodisperse Glassy Nematic Oligo(fluorene)s

et al. 2003

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ment effect at the higher energy side more easily than quantum wires, we expect the SiNTs to be more useful for future optoelectronic devices. ExperimentalPorous alumina templates were prepared by an anodization process. An aluminum foil (99.99 %, 0.13 mm thick, Aldrich) was electropolished in a perchloric acid/ethanol solution (ethanol (95 vol.-%)/perchloric acid (70 vol.-%) = 5:1) at 9 C at a constant dc (direct current) voltage of 18 V for 1.5 min. This cleaned aluminum sheet was then anodized in a 0.3 M oxalic acid solution at 5 C at a constant applied voltage of 40 V for 6 h. The resultant aluminum oxide layer was removed by dipping into an aqueous mixture of phosphoric acid (6 wt.-%) and chromic acid (1.8 wt.-%) at 60 C. The second anodization was performed for 20 min at the same conditions in order to form a regular pore array of hexagons. After pore widening by dipping into an aqueous solution of 0.1 M phosphoric acid for 10 min, we performed heat treatment to enhance the crystallinity of the alumina templates at 500 C for 30 min under Ar atmosphere. A regular array of hexagonal porous alumina was formed on both surfaces of aluminum film. This template was brought into the MBE chamber to grow SiNTs, where the chamber was evacuated to a pressure of 5 10 ±10 torr. The Si atoms/clusters were supplied for 10 min by electron-beam evaporator with a growth rate of 0.07 s ±1. The substrate temperature was maintained at 400 C in order to prevent the aluminum layer from being melted. After growth, the sample was further heat treated at 600 C or 750 C under ambient conditions for oxidation.The morphology of the SiNTs was observed by the field-emission scanning electron microscope (FESEM, JEOL-JSM6770F). High-resolution transmission electron microscopy (HRTEM, JEOL-JEM3011, 300 keV) was also used to determine the atomic details of the SiNTs. For HRTEM observations, small pieces of SiNTs were peeled off from the alumina surface and suspended, followed by further dispersion in isopropanol simply by stirring and sonication. The solvent containing the SiNTs was dropped on a holey carbon micro-grid. The photoluminescence (PL) spectra were measured with a He±Cd laser (325 nm). The laser beam diameter was about 0.3 mm with a power of 10 mW.

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“…In the area of optoelectronic application for Si nc, the first report on the visible red emission by nanocrystalline porous Si [1] had created much interest in nanocrystalline Si as a next generation light emitting source. Since then, various visible photoluminescence (PL) had been reported by many groups [2,3]. Though this form of PL has been discovered for more than 10 years, there is still no consensus on the single mechanism among all researchers.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of mechanically milled silicon nanocrystals embedded in TEOS thin films

Lau¹,

Tan²,

Ooi³

et al. 2006

Journal of Crystal Growth

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Photoluminescence mechanism for blue-light-emitting porous silicon

Cited by 69 publications

References 21 publications

Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

Strongly Polarized and Efficient Blue Organic Light‐Emitting Diodes Using Monodisperse Glassy Nematic Oligo(fluorene)s

Characteristics of mechanically milled silicon nanocrystals embedded in TEOS thin films

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