Photoluminescence in the amorphous system Si<i>x</i>C1−<i>x</i>

Engemann, D.; Fischer, R.; Knecht, J.

doi:10.1063/1.90132

Cited by 87 publications

(11 citation statements)

References 5 publications

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“…This may be taken as an indication of the homogeneity of the films. If clustering occurred one would expect to find a double structure as in the system Si-C [8]. The shift of the spectrum to lower energy is obviously accompanied by a decrease of its half-width.…”

Section: Resultsmentioning

confidence: 95%

Electronic Properties of Amorphous Si_xGe_1−x:H Films

Hauschildt

Fischer

Fuhs

1980

Physica Status Solidi (b)

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563Amorphous Si,Gel-,:H films are prepared by decomposition of SiHJGeH, mixtures in a rf glow discharge. With increasing Ge-content the optical gap aa well as the energy and the half width of the luminescence peak decrease linearly. It is concluded that by admixture of Ge the tail state distribution becomes steeper and that the concentration of defects is considerably enhanced. Already small amounts of Ge lead to a drastic decrease of the photoconductivity (vpt-product).Amorphe Si,Gel--z : H-Schichten werden durch Zersetzung von SiHJGeH,-Mischungen in einer HFGlimmentladung hergestellt. Mit zunehmendem Ge-Gehalt nimmt sowohl das optische Gap als auch die Energie und Halbwertsbreite des Lumineszenzmaximums linear ab. Es wird angenommen, daB durch die Zumischung von Ge die Verteilung der Auslluferzustlnde steiler wird und daB die Konzentration von Defekten betrlchtlich erhoht wird. Schon geringe Mengen von Ge fiihren zu einem drastischen Riickgang der Photoleitflhigkeit (vpt-Produkt).

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Section: Resultsmentioning

confidence: 95%

Electronic Properties of Amorphous Si_xGe_1−x:H Films

Hauschildt

Fischer

Fuhs

1980

Physica Status Solidi (b)

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“…The compositional analysis as given in Table 1(a) indicates that the films prepared with C 2 H 2 precursor possess the highest carbon content, whereas films prepared using only Si(CH 3 ) 4 have the highest silicon content. It is also found that the presence of oxygen content having 16-21 at.% is due to surface contamination in the open atmosphere after deposition.…”

Section: Resultsmentioning

confidence: 99%

“…Films studied in this article have been deposited using three combinations of vapour precursors. The first sample was prepared using C 2 H 2 vapour precursor, the second one using tetramethylsilane [Si(CH 3 ) 4 , TMS], and the third one using both C 2 H 2 and TMS. The thickness of the films is 150F15 nm and was controlled by the deposition time.…”

Section: Methodsmentioning

confidence: 99%

“…Alloys with low carbon content have been studied for many years and are used presently as a transparent doped layer in singlejunction solar cells and photo detectors [1,2] and as a highband-gap window component in tandem solar cells [3]. a-CH/Si alloys with high band gap (and high carbon content) emit visible photoluminescence at room temperature [4,5]. This has led to studies of this material for application as the active layer in large area electro luminescent devices [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films

et al. 2005

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“…In our study this corresponds to a-SiSn(C:H) films with Sn concentration of about~18 at.%. Despite of the contamination by C, which widens the band gap [17], the incorporation of Sn clearly resulted in the narrowing of the band gap from 1.86 to 0.9 eV. The decrement rate −0.048 of E opt is identical to that of the a-SiSn:H thin film fabricated by using rf-and dc-sputtering system [15].…”

Section: Resultsmentioning

confidence: 87%