Photoluminescence in phosphorous-implanted ZnO films

Vaithianathan, V.; Hishita, Shunichi; Park, Jae Young; Kim, Sang Sub

doi:10.1063/1.2800278

Cited by 20 publications

(12 citation statements)

References 13 publications

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“…However, p-type doping of ZnO is still a major challenge for device fabrication. For the purpose of p-type ZnO preparation, N, As and P have been incorporated through thin film growth doping [2,3] and ion implantation [4,5]. These research results indicate that stable p-type ZnO is difficult to obtain and the doped ZnO is still n-type in most cases [6,7].…”

Section: Introductionmentioning

confidence: 91%

Implantation induced defects and electrical properties of Sb-implanted ZnO

Xie

Liu

et al. 2015

Sci. China Technol. Sci.

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Defects in Sb implanted ZnO single crystals have been studied by using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) and Raman scattering. Electrical properties of the samples were analyzed by Hall effect measurement. The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration. The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown ZnO single crystal after annealing. These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site, forming the complex donor defect upon high temperature annealing, resulting in n-type conduction even if the implantation dose is quite high. ZnO, photoluminescence, Ramam scattering, Hall measurement, ion implantation, defect Citation:Xie H, Liu T, Liu J M, et al. Implantation induced defects and electrical properties of Sb-implanted ZnO.

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Section: Introductionmentioning

confidence: 91%

Implantation induced defects and electrical properties of Sb-implanted ZnO

Xie

Liu

et al. 2015

Sci. China Technol. Sci.

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“…This indicates that the ZnO nanorods were grown with c-axis preferred orientation, which is because the (001) basal plane of ZnO has the lowest surface energy. 13 However, the value of the TC (002) was dramatically decreased by further increase in the Cd mole fraction. It is wellknown that the FWHM of the ZnO (002) diffraction peak is closely related to both grain size and crystal quality.…”

Section: Methodsmentioning

confidence: 99%

ZnO Nanorods Grown on Cd_xZn_1-xO Seed Layers with Various Cd Mole Fractions

Kim¹,

Kim²,

Yim³

et al. 2012

Bulletin of the Korean Chemical Society

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ZnO nanorods were grown on the CdxZn1-xO seed layers with various Cd mole fractions by hydrothermal method. The effects of the Cd mole fraction for CdxZn1-xO seed layers on the structural and optical properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, and photoluminescence. The narrowest full-width at half-maximum and largest grain size of the CdxZn1-xO seed layers, indicating improvement in crystal quality, were observed at the Cd mole fraction of 0.5. At the Cd mole fraction of 0.5, the largest enhancement in the density, the crystal quality, and the growth rate of the ZnO nanorods was observed while their appearance was not affected significantly by the incorporation of the Cd in the CdxZn1-xO seed layers. Consequently, the luminescent properties of the ZnO nanorods were enhanced. The largest improvement in the structural and optical properties of the ZnO nanorods was observed at the Cd mole fraction of 0.5.

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“…P is also considered to be one of the suitable dopants. Although p-type conduction can be realized with P-doping in ZnO by several methods, the reliability of the p-type behavior remains questionable [6][7][8][9][10]; the electronic structure and optical properties have not been completely understood. Therefore, theoretical investigations of the P and donors codoped ZnO systems are necessary.…”

Section: Introductionmentioning

confidence: 99%