Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

Ishikawa, T.; Koga, K.; Itahashi, T.; Vlasenko, L. S.; Itoh, Kohei M.

doi:10.1016/j.physb.2009.08.316

Cited by 5 publications

(1 citation statement)

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“…In a study of the transient decay of the C center PL, Bohnert et al [18] inferred that the observed NP C-line must originate from the singlet IBE state, and that there must be an unobserved triplet level lying ∼3.2 meV below the singlet level. This was confirmed later by the observation of PL from the triplet level (labelled C T ) lying 2.64 meV below the singlet transition (now labelled C 0 ) [33]. Here we find a singlet-triplet splitting of 2.633 meV, in good agreement with the previously PL spectra collected with the FTIR of the main C 0 -line together with the C T -line and 18 O and 13 C isotope-shifted versions of the C 0 -line are shown in Fig.…”

Section: Resultsmentioning

confidence: 57%

Highly enriched Si28 reveals remarkable optical linewidths and fine structure for well-known damage centers

et al. 2018

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Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched 28 Si than in natural Si, due to the elimination of inhomogeneous isotopic broadening, this has not yet been investigated for radiation damage centers. We report results for the well-known G, W and C damage centers in highly enriched 28 Si, with optical linewidth improvements in some cases of over two orders of magnitude, revealing previously hidden fine structure in the G center emission and absorption. These results have direct implications for the linewidths to be expected from single center emission, even in natural Si, and for models for the G center structure. The advantages of 28 Si can be readily extended to the study of other radiation damage centers in Si. * thewalt@sfu.ca

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Section: Resultsmentioning

confidence: 57%