2002
DOI: 10.1016/s0022-2313(01)00422-7
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Photoluminescence from silsesquioxanes R8(SiO1.5)8

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Cited by 23 publications
(24 citation statements)
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“…Recently, high-frequency magnetization has been induced by intense laser light in a wide variety of materials including simple chemical compounds. Nonlinear scattering experiments can characterize 3-D silsesquioxane structures in a novel way that exploits their susceptibility to the joint forces of magnetic and electric optical fields. Magnetoelectric scattering at the molecular level is sensitive to the potential energy surface V within each molecule.…”
Section: Resultsmentioning
confidence: 99%
“…Recently, high-frequency magnetization has been induced by intense laser light in a wide variety of materials including simple chemical compounds. Nonlinear scattering experiments can characterize 3-D silsesquioxane structures in a novel way that exploits their susceptibility to the joint forces of magnetic and electric optical fields. Magnetoelectric scattering at the molecular level is sensitive to the potential energy surface V within each molecule.…”
Section: Resultsmentioning
confidence: 99%
“…A potential explanation was identified based on theoretical studies. Silsesquioxanes in general have been the subject of a large number of theoretical studies. Most of the studies find that the highest occupied molecular orbital (HOMO) involves 2p lone pair states of A 2g symmetry on the oxygen atoms which is not surprising. However, these same studies find that the lowest unoccupied molecular orbital (LUMO) has 4A 1 symmetry and involves contributions from all Si and oxygen atoms and the organic substituents, is spherical, and resides in the core center.…”
Section: Properties Of Stilbenesqsmentioning
confidence: 99%
“…It is not uncommon for DFT-calculated band gaps to overestimate experimental results. Thus, Marsmann et al demonstrated that band gap calculations on the [RSiO 1.5 ] 8 cages are high, reporting that [XSiO 1.5 ] 8 where X = CH 3 −, CH 3 CH 2 , ..., decyl) absorb 3.8 eV (325 nm) light and emit at ≈2.8−3.5 eV (330−370 nm). Their calculations suggest a 6.0 eV band gap for [HSiO 1.5 ] 8 , but the experimental value was 4.4 eV, which is 1.6 eV lower.…”
Section: Properties Of Stilbenesqsmentioning
confidence: 99%
“…We suspect that the addition of the first substituent may increase the overall reactivity of all vinyl groups in OVS, thus leading to the observed higher substituted products. As unique electronic and luminescent properties have been described for SSQ materials, a pseudo‐electron delocalization possibility exists 34,35. This issue is a topic of continued study in our group.…”
Section: Resultsmentioning
confidence: 81%