Photoluminescence from GaN Implanted with Be and F

Reshchikov, M. A.; Andrieiev, O.; Vorobiov, M.; Demchenko, D. O.

doi:10.1002/pssb.202300131

Cited by 10 publications

(7 citation statements)

References 48 publications

(125 reference statements)

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“…The smaller‐than‐expected slope of the experimental T i −1 (ln G ) dependence was observed earlier for defects with relatively shallow levels and attributed to the surface effects. [ 11,33 ] For the first step, a better fit would be obtained with E A1 = 0.18 eV and B 1 ≈ 10 32 cm −3 s −1 . However, we consider these E A1 and B 1 values to be overestimated for the above reasons.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Reshchikov

Vorobiov

Andrieiev

et al. 2022

Physica Status Solidi (b)

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A systematic photoluminescence study of Be‐doped GaN grown by metal‐organic chemical vapor deposition is presented. All Be‐doped samples show the ultraviolet luminescence (UVLBe) band with a maximum at 3.38 eV and the yellow luminescence (YLBe) band with a maximum at ≈2.15 eV in GaN:Be having various concentrations of Be. The UVLBe band is attributed to the shallow state of the BeGa acceptor with a delocalized hole. The YLBe band is caused by a Be‐related defect, possibly the polaronic state of the BeGa acceptor with the charge transition level at 0.3 eV above the valence band. This broad band exhibits unusual properties. In particular, it always shows two steps in its thermal quenching. The second step at T ≈ 200 K is attributed to the emission of holes from the 0.3 eV level to the conduction band. The origin of the first step remains unexplained.

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Section: Resultsmentioning

confidence: 99%

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Reshchikov

Vorobiov

Andrieiev

et al. 2022

Physica Status Solidi (b)

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“…[ 40 ] An exception is the C N H i donor, which causes the blue (BL2) band in moderately conductive GaN thanks to the relatively fast capture of photogenerated holes by the 0/+ level located at 0.15 eV above the VBM. [ 44 ] In p ‐type GaN, the GL2 band may not be observed because the V N is in the 3+ state, and the defect must capture three electrons to produce the GL2 band. We predict that the V N 3+ defects are either inefficient or nonradiative recombination centers.…”

Section: The Vn Defect In Gan As F Centermentioning

confidence: 99%

Photoluminescence from Vacancy‐Containing Defects in GaN

Reshchikov

2022

Physica Status Solidi (a)

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Optical studies of point defects in crystals began in the 1920s by Robert Pohl and his research group at the University of Göttingen. [1] For many years, the so-called color centers in alkali halides were the focus of these studies, and the primary defect of interest was F-center. [2][3][4][5] The F-center (named after the German word "Farbe" for color) is an anion vacancy; an example is V Cl in NaCl. The name "color centers," first used in 1930, is applied to atomic-size imperfections of a crystal lattice that cause Gaussian-like absorption bands in alkali halides. [1] The family of color centers quickly increased: the U, V, F', M, R, H, V k , F 2 , F 3 , … centers, which were thought to be primarily intrinsic (native) defects and their complexes. [1] (Typical terminology can be found in Refs. [3,6,7]). Theorists predicted that when light is absorbed in the characteristic absorption band (e.g., at 2.77 eV for NaCl), luminescence may occur at lower photon energy. [8,9] In particular, Pekar [9] calculated for the F-center in NaCl that a luminescence band with a maximum at 0.99 eV should be observed at temperatures below 100 K. It took three decades after the beginning of optical studies to discover photoluminescence (PL) from these defects. First, Ghormley and Levy [10] have found a PL band that could be due to the F-center in KCl, while Klick [11] could not confirm it. Later, careful experiments of Botden et al. [12] unambiguously identified F-centers in KCl, RbCl, KBr, and KI. The absorption and emission spectra of color centers represent Gaussian-like bands, the shape and position of which can be explained with the configuration-coordinate (cc) model.At about the same time, intensive studies were conducted on luminescence from semiconductor phosphors, such as ZnS, which had applications in television tubes, fluorescent lamps, and X-Ray screens. Metal impurities (activators) were used to activate PL bands. However, sometimes, bright PL bands appeared without activation. These "self-activated" PL bands in ZnS were attributed to the zinc vacancy (V Zn ) associated with shallow donors (group-III impurities in the nearest Zn site or group-VII impurities in the S site). [13] Experiments with polarized PL confirmed the predicted symmetry of the defect complexes. [14] Later, very similar complexes were found in n-type GaAs, where strong self-activated luminescence with a maximum at 1.2 eV has been attributed to the gallium vacancy-donor complexes, such as V Ga Te As and V Ga Sn Ga . [15][16][17] PL studies using polarized excitation and uniaxial pressure revealed that the Jahn-Teller distortions lower the symmetry of these defects. [18] Similarly, complexes involving the arsenic vacancy and shallow acceptors (V As Cd Ga and V As Zn Ga ) were proposed to be the origin of the 1.37 eV band in p-type GaAs. [19] GaN, being the third-generation semiconductor material (wide-bandgap semiconductors), has gained unprecedented attention in the past three decades due to its applications in light-emitting and high-power devices. Un...

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“…Based on the above results of simulation, an empirical equation can be defined by fitting the fixed charge concentration required for the highest BV and the depth of implant as shown in Figure 5b and can be expressed as: FC = exp −Depth×1.79+41. 28 (1…”

Section: Drift Layer Dopingmentioning

confidence: 99%

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

Maurya,

Alquier,

El Amrani

et al. 2024

Micromachines

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This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes. Several device and implant-related parameters are examined using Synopsys Sentaurus TCAD simulations in order to determine the optimum fixed negative charge concentration required to achieve the highest BV. The simulated structure consisted of a Schottky diode with a box consisting of negative fixed charges to achieve the edge termination of the Schottky device. An empirical equation is proposed to determine the optimum fixed charge concentration for the highest BV based on depth. The simulation also considered implantation profiles derived from SIMS data from an actual device implanted with multi-energy and multi-dose F. It is demonstrated that the BV has a similar dependence on the key parameters like in the box profile. In summary, this work provides valuable insights into optimizing edge termination techniques using negative fixed charge for improved BV in vertical GaN power devices.

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Photoluminescence from GaN Implanted with Be and F

Cited by 10 publications

References 48 publications

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

Photoluminescence from Vacancy‐Containing Defects in GaN

Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices

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