Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth

Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

“…Quantum nanodisks (NDs) of GaAs with desirable optical qualities have recently been grown from quantum wells (QWs) by fully top-down lithography, using damage-free neutral-beam etching aided by bioengineering [1][2][3][4]. This fabrication method allows us to flexibly design the structural parameters of the NDs.…”

“…This fabrication method allows us to flexibly design the structural parameters of the NDs. Specifically, the thickness, diameter, and interval can be individually controlled by protein engineering [3,4]. This enables us to investigate effects of the lateral quantum confinement of carriers or excitons on spin dynamics.…”

Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

“…Recently, we have succeeded in the fabrication of GaAs QD arrays embedded in AlGaAs quantum-wire (QWR) host material by using a combination of neutral beam etching and atomic hydrogen-assisted MBE regrowth. 8 This top-down lithography and etching method is a strain-free approach, with the advantages of being able to precisely control the size, spacing, and arrangement of the QD during growth, which is difficult to achieve by self-assembling growth. In this study, we performed theoretical simulation of GaAs/AlGaAs QD arrays using a combined multi band k Á p and drift-diffusion transport method.…”

Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

“…Details of the preparation of GaAs ND samples have been provided elsewhere. 16,17 First, doublelayered QWs of GaAs/Al 0.15 Ga 0.85 As with GaAs-well thicknesses of 8 and 4 nm were grown on GaAs (100) substrates using metal-organic vapor phase epitaxy (MOVPE). The surface was coated with ferritin supramolecules containing iron nanoparticles in their cavities.…”

“…[16][17][18] These NDs were directly fabricated from GaAs QWs by newly developed top-down lithography using ultra-low-damage neutral-beam etching 19 aided by protein-engineered bio-nano-templates of ferritin supramolecules. 20 These unique NDs provide us with the first good opportunity for quantitative testing of the effects of strong lateral quantum confinement on spinrelaxation dynamics.…”