2021
DOI: 10.1109/jphotov.2021.3099739
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Photoluminescence for Defect Detection on Full-Sized Photovoltaic Modules

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Cited by 34 publications
(27 citation statements)
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“…8(b) shows that after 9-days of PID recovery, the modules are operating at nearly 23°C. There are still several hotspots even after the PID recovery was applied; this is typically due to the severe impact of the PID, forming cracks, breakdown regions, and an increase in the solar cells shunt resistance [16,22].…”
Section: B Pid Recoverymentioning
confidence: 99%
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“…8(b) shows that after 9-days of PID recovery, the modules are operating at nearly 23°C. There are still several hotspots even after the PID recovery was applied; this is typically due to the severe impact of the PID, forming cracks, breakdown regions, and an increase in the solar cells shunt resistance [16,22].…”
Section: B Pid Recoverymentioning
confidence: 99%
“…To identify the consequence of PID on PV modules, electroluminescence (EL) imaging is usually performed [13][14][15]. In contrast, other researchers [16,17] have suggested using photoluminescence (PL) imaging. PL imaging is more practical for inspecting large-scale PV modules.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, diagnostics based on electroluminescence are more expensive than IR analysis. For all these reasons, electroluminescence is preferred to detect specific defects not detectable with IR analysis (e.g., snail trails, EVA degradation) [16]. For a large PV plant, the main difficulty is the time needed to check all the PV modules, considering that an old 1 MWp PV plant is usually constituted by about 5000 PV modules, even if the new modules have a higher power peak than the old ones, as already said.…”
Section: Cloud-based Platform For Ir Analysis Of Photovoltaic Modulesmentioning
confidence: 99%
“…However, after the experimental research of related companies, it is known that when the ultrasonic probe is translated on the module, although the signal change can tell whether there are micro-cracks, the gap between the cells will also cause signal change, which cannot be applied to the detection of the entire module. The second is the PL detection scheme, which uses a customized light source to illuminate the silicon wafer, generates excitation and causes luminescence, and collects corresponding images for detection [13] [14]. However, the cost of this scheme is high, and it is generally used for the quality control of silicon wafers before leaving the factory.…”
Section: Related Workmentioning
confidence: 99%