Photoluminescence Excitation Spectroscopy of MOCVD-Grown: GaAs:V

Abstract

Photoluminescence excitation spectra have been obtained at 4.2 K for the characteristic V 3 + intracenter emission (0.65 -0.75 eV) of MOCVD-grown GaAs:V. Oscillatory structure of the PLE spectrum with above-band-edge excitation has been observed in GaAs:V for the first time. The oscillatory period is found to be 41.3 ± 0.5 meV, corresponding to [1 + (m*,/mhh)]thWLO, and is due to energy relaxation of conduction band electrons through LO phonon emission. Our results suggest capture by a shallow donor as an intermediate step in the luminescence from the V center.