Photoluminescence excitation properties of porous silicon with and without Er3+–Yb3+-containing complex

NIR-luminescence from ternary lanthanide [HoIII, PrIII and TmIII] complexes with 1-(2-naphthyl)-4,4,4-trifluoro-1,3-butanedionate

“…2(B), (D) and (F), respectively. It is obviously from the energy level scheme of each ion that the characteristic absorption bands can be attributed to the transitions from the ground levels 5 I 8 , 3 H 4 and 3 H 6 to the higher energy levels for the Ho, Pr and Tm complexes, respectively [24,25]. The broad absorption bands in the range from 200 to 400 nm can be assigned to the electronic transitions from the ground-state level (p) S 0 to the excited level (p n ) S 1 of organic ligands [26].…”

Physical Study of Thin Film and Monolithic Nano-Composites [SiO<sub>2</sub>: 11P<sub>2</sub>O<sub>5</sub>: 3 Al<sub>2</sub>O<sub>3</sub>: (1.2) Er (1.2, 1.8 and 3) Yb] Prepared by Sol Gel Technique, Planar Waveguide and Co-Operative Up-Conversion

“…The de-excitation of the 4 I 11/2 (Er) level, via no-radiation multi-phonon relaxation, takes the population of the 4 I 13/2 (Er) level. The absorption of the second photon ( 488 nm) promotes the excitation in the 4 F 9/2 (Er) level, resulting in the group red emission with its maximum at ( 666 nm) [28]. The ESA approach occurs only during excitation, whereas the ET can happen both during and after excitation.…”

Multilayer nanostructures based on porous silicon for optoelectronics

“…The surface of a sample nSiC / p-porSi structure with the pore diameter integrated into the silicon optoelectronics can be created, which will increase the speed, the information recording density, noise immunity and вой подложке. Такие структуры имеют хорошие люминесцентные свойства в ближней ИК-области спектра при комнатной температуре [13,14].…”