Photoluminescence, conductivity and structural study of terbium doped ZnO films grown on different substrates

Korsunska, N.; Borkovska, L.; Polischuk, Yu.; Kolomys, O.; Lytvyn, P. M.; Маркевич, И. В.; Strelchuk, V. V.; Kladko, V. P.; Melnichuk, O.; Melnichuk, L.; Khomenkova, L.; Guillaume, C.; Portier, X.

doi:10.1016/j.mssp.2019.01.041

Cited by 15 publications

(14 citation statements)

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“…Recently, ZnO thin films deposited onto various substrates have been studied both theoretically and experimentally [36][37][38]. However, we do not know publications concerning the study of MgZnO films with various chemical compositions and electron concentrations that are located on 6H-SiC dielectric substrates, which were carried out making use of IR reflection spectroscopy and the attenuated total reflection (ATR) method in the range of "residual rays" of the film and the substrate, and for the radiation orientation ⊥ .…”

Section: Introductionmentioning

confidence: 99%

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Melnichuk¹,

Melnichuk²,

Korsunska³

et al. 2020

Ukr. J. Phys.

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Specular infrared reflection spectra in the range of “residual rays” of the film and the substrate and in the case of the E⊥c orientation of the electric field have been simulated for the first time for thin MgxZn1−xO films deposited on optically anisotropic 6H-SiC substrates. The simulation was carried out making use of self-consistent parameters obtained earlier for magnesium oxide, zinc oxide, and silicon carbide single crystals. The film thickness and the Mg content x in the film are demonstrated to considerably distort the reflection spectra and to change the reflectivity of the MgxZn1−xO/6H-SiC structure. Using the Kramers–Kronig relation, the spectral intervals, where the reflectivity is sensitive to the film thickness and to the doping levels of the film and the substrate, are determined. The main attention is paid to analyze results obtained for x = 0.2. The existence of surface polaritons in such structures is theoretically demonstrated for the first time, and the attenuated total reflectance surface I(v)/I0(v) is plotted as a three-dimensional representation of the structure transmittance dependence on the radiation frequency and the incidence angle. A possibility to study the resonant interaction of optical phonons with plasmons in the film and the substrate is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Phonon-Polariton Excitations in MgZnO/6H-SiC Structures

Melnichuk¹,

Melnichuk²,

Korsunska³

et al. 2020

Ukr. J. Phys.

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“…The orientation of the electric field was selected to be perpendicular to the -axis of the SiO 2 substrate. The experimental procedure was described in more details in works [7,8].…”

Section: Experimental Techniquementioning

confidence: 99%

“…The IR reflection spectra ( ) of absorbing ZnO films deposited on a "semiinfinite" SiO 2 substrate were theoretically calculated in the spectral interval of "residual rays" for the film and the substrate. In so doing, the following mathematical expressions were applied [5,7,8]:…”

Section: Theoretical Partmentioning

confidence: 99%

“…Nowadays, there are a number of scientific works devoted to the study of the optical and electrophysical properties of thin semiconductor films on dielectric and semiconductor substrates [4][5][6][7][8][9][10][11][12][13][14]. At the same time, the influence of the film and substrate properties on the parameters of the film-substrate structure has not been analyzed enough.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the interaction of phonon and plasmon film excitations with the phonon subsystem of a substrate can substantially change the film properties in comparison with the properties of corresponding single crystals [3,5,6]. Among many studies dealing with the physical properties of thin films that stimulate their widespread application in various domains of science and engineering, the research of the optical and electrical properties of thin zinc oxide films deposited onto dielectric substrates is of considerable interest [4][5][6][7][8][9][10][11][12]. The choice of zinc oxide as an object to study is associated with its physical and chemical properties (optical, mechanical, piezoelectric, and others).…”

Section: Introductionmentioning

confidence: 99%

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Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval

Melnichuk

Korsunska

et al. 2019

Ukr. J. Phys.

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Optical and electrophysical properties of terbium-doped zinc oxide films have been studied, by using the external reflection IR spectroscopy. The films were deposited onto silicon oxide substrates with the help of the magnetron sputtering method. A theoretical analysis of the reflection spectra of the ZnO/SiO2 structure is carried out in the framework of a multioscillatory model in the spectral interval 50–1500 cm−1 and for the electrical field orientation perpendicular to the c-axis (E⊥C). The method of dispersion analysis is applied to determine the optical and electrical properties of ZnO films, as well as the oscillator strengths and damping coefficients in the ZnO film and the SiO2 substrate. The influences of the phonon and plasmon-phonon subsystems in the ZnO film on the shape of IR reflection spectra registered from the Tb–ZnO/SiO2 structure are elucidated.

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