Photoluminescence Characterization of Vertically Coupled Low Density InGaAs Quantum Dots for the application to Quantum Information Processing Devices

Abstract

Vertically coupled low density InGaAs quantum dots (QDs) buried in GaAs matrix were grown with migration enhanced molecular beam epitaxy method as a candidate for quantum information processing devices. We performed excitation power-dependent photoluminescence measurements at cryogenic temperature to analyze the effects of vertical coupling according to the variation in thickness of spacer layer. The more intense coupling effects were observed with the thinner spacer layer, which modified emission properties of QDs significantly. The low surface density of QDs was observed by atomic force microscopy, and scanning transmission electron microscopy verified the successful vertical coupling between low density QDs.