Photoluminescence characterization of nano‐size defects in sub‐surface region of silicon wafers

Tanahashi, Katsuto; Yamada-Kaneta, Hiroshi

doi:10.1002/sia.1966

Cited by 2 publications

(1 citation statement)

References 5 publications

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“…However, the intensity of PL band was increased for BM g-C 3 N 4 and decreased for BM+HT g-C 3 N 4 , respectively. Generally, the PL process is largely governed by the presence of defects since they act as recombination centers for photogenerated electrons and holes [22] . In our case, the ball milling may increase the density of defects in g-C 3 N 4 , and therefore improve the PL intensity.…”

Section: Resultsmentioning

confidence: 99%

Influence of mechanical milling on photocatalytic activity of g-C3N4 prepared by heating melamine

Yang

Feng

Huang

2010

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Using X-ray diffraction, transmission electron microscopy, Brunauer-Emmett-Teller surface area measurement, ultraviolet-visible diffuse reflection spectra, and photoluminescence spectroscopy, the effect of mechanical milling on the photocatalytic activity of g-C 3 N 4 photocatalyst was investigated. The rhodamine B, as a photodegrading goal, was used to evaluate the photocatalytic activity of g-C 3 N 4 . The experimental results indicate that the milling treatment is an effective method to improve the photocatalytic activity of g-C 3 N 4 . The enhanced photocatalytic activity was attributed to the improvement in catalyst's surface area and dye adsorption on catalyst surface. Moreover, checking the luminescence properties of g-C 3 N 4 , it is found that the photocatalytic active sites on g-C 3 N 4 are likely the same as luminescence sites.

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Section: Resultsmentioning

confidence: 99%