Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide

Abstract

Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness Appl. Phys. Lett. 100, 261901 (2012) Photoexcited carrier dynamics in AlInN/GaN heterostructures Appl. Phys. Lett. 100, 242104 (2012) Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature AIP Advances 2, 022149 (2012) On conversion of luminescence into absorption and the van Roosbroeck-Shockley relation Appl. Phys. Lett. 100, 222103 (2012) Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN Appl. Phys. Lett. 100, 221107 (2012) Additional information on J. Appl. Phys. Dependence on the excitation power and temperature of the photoluminescence emission of GaAs quantum well laser structures using GaAs/AlAs superlattices in the waveguide is reported. The effects related to a quality reduction due to the presence of a thick ternary AlGaAs cladding layer in the bottom of the laser structure were elucidated by comparing to the photoluminescence of a similar waveguide structure, except for the AlGaAs bottom layer. The excitation power dependence shows the strong excitonic origin of the light emission in the temperature range 4-300 K in both structures. Carrier transport mechanisms through the superlattices is analyzed from the evolution of the photoluminescence of the quantum well and the superlattice confining layers; a structure dependent transparency temperature is defined, at which transport changes from tunneling assisted to extended minibands regime. The value of this parameter depends on the localized states in the superlattice minibands, caused by interface roughness.

Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings

“…The QRs were obtained after a growth interruption when the dots were partially covered with 2 nm of GaAs under a flux of As 2 , because of a balance between InGaAs alloying and InAs dewetting processes [14]. More details about the growth of these kinds of samples can be found in references [8,15,16].…”

“…3), R 1 = 1.6 × 10 9 s −1 and R 2 = 1.13 × 10 9 s −1 . In this way, the values of U 1 (2) and E 1(2) can be deduced from the best fits of the experimental variation of I 1(2) (T ) to equation (14), as represented by continuous lines in Figure 4. The parameters used in the fit of I 1 (T ) nicely reproduce the experimental increase of I 2 (T ) in the 40-80 K temperature region, as observed in Figure 4b, whereas the high temperature region (not complete in this study) is reproduced by using E 2 = 60 ± 10 meV and a 2 = 750.…”

Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures

“…In the higher-temperature region from 70 K and above, the PL peak decreases with temperature, following the trend of the calculated interband transition energy. The blueshift phenomenon at low-temperature region was also reported in bulk GaInP [20], in InGaN [21], and in GaAs quantum wells [22,23]. It is believed to be caused by the localization of the carriers at low temperatures.…”

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

“…And their difference becomes distinct at low temperatures. As there are more composition fluctuation, well-width fluctuation and interface roughness inside the as-grown sample which give rise to a statistical distribution of local potential minima, hence PL emission lies at the lower energy [24,25]. The etching process could have a homogenizing effect on these composition fluctuation and interface roughness.…”