2006
DOI: 10.1016/j.tsf.2005.07.020
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Photoluminescence characteristics of Ir(ppy)3 and PtOEP doped in TPD host material

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Cited by 35 publications
(30 citation statements)
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“…The long lifetime causes the energy dissipation from the T 1 level in PtOEP. This is confirmed from the observation that the PtOEP emission intensity decreases with increasing temperature from 10 to 300 K [11], because the energy dissipation rate increases with increasing temperature as mentioned later.…”
Section: Phosphorescence Intensity Of Ptoepsupporting
confidence: 75%
“…The long lifetime causes the energy dissipation from the T 1 level in PtOEP. This is confirmed from the observation that the PtOEP emission intensity decreases with increasing temperature from 10 to 300 K [11], because the energy dissipation rate increases with increasing temperature as mentioned later.…”
Section: Phosphorescence Intensity Of Ptoepsupporting
confidence: 75%
“…The strong PIA signal of PtOEP MEH-PPV is around 1.27 eV, [ 22,23 ] which lies below the energy level of 1.9 eV [ 24 ] of the phosphorescent dye, PtOEP. The PL quenching of MEH-PPV thus occurs neither by singlet-singlet energy transfer [ 21 ] nor by exciton dissociation.…”
Section: Resultsmentioning
confidence: 87%
“…The same rate was assumed for the Dexter transfer between the host and guest molecules. The triplet energy levels-determining the exciton diffusion-were taken from experiment 14,18 and Gaussian excitonic energetic disorder of 0.1 eV was assumed. At least 124 possible neighbors were considered for each charge or exciton hop.…”
mentioning
confidence: 99%