Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs∕GaAs quantum well

Kong, Ling-Min; Wu, Zhouling; Feng, Zhe Chuan; Ferguson, Ian T.

doi:10.1063/1.2745410

Cited by 15 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…(iii) High-T range (220-300 K), where the observed decrease of s d is attributed to thermionic losses. 28 The observed increase in s d in the mid-T range is characterized by an activation energy between 20 and 80 meV, as 194306 (2013) in other similar nanostructures, 41,42 InAs/GaAs selfassembled QDs 43,44 and quantum ring nanostructures. 45,46 The origin of this behavior has been attributed to a thermally induced population of dark excitons; 44,45 where transitions p e -s e (or p h -s h ), initially forbidden, becomes allowed due to thermal transfer.…”

Section: -2mentioning

confidence: 77%

The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

Trevisi

Suárez

Seravalli

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

The structural and morphological features of bimodal-sized InAs/(In)GaAs quantum dots with density in the low 10 9 cm À2 range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rate-equation model for the exciton recombination dynamics, we show that thermal population of dark states is inhibited in both QD families capped by high In content InGaAs layers. We discuss this behavior in terms of alloy disorder and increased density of point defects in the InGaAs pseudomorphic layer. V C 2013 AIP Publishing LLC. [http://dx

show abstract

Section: -2mentioning

confidence: 77%

The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

Trevisi

Suárez

Seravalli

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Besides, at higher temperature ( T > T c ), there is a faster reduction in the average PL lifetime due to the dominance of non‐radiative recombination. There are several competing mechanisms which are responsible for such kind of phenomena such as; (i) thermally induced carrier distribution among the QDs, (ii) thermally induced population of dark excitons, and (iii) non‐radiative recombination …”

Section: Resultsmentioning

confidence: 99%

Enhanced Performance of In(Ga)As QD Based Optoelectronic Devices through Improved Interface Quality between QD and Matrix Material

Panda¹,

Chatterjee

Saha

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

The interface quality in InAs/GaAs and In0.5Ga0.5As/GaAs quantum dot (QD) heterostructures are elucidated through the phonon‐assisted vibrational modes and is found better in the latter case. The strain‐induced formation of interface defects and lattice deformations in each self‐assembled QDs have been analyzed by means of room temperature Raman spectroscopy (RS). This study provides an insight into the inter‐dot migration and thermalization process of carriers in both QD families with the aid of steady‐state and time‐resolved photoluminescence (TRPL) measurements. The longer‐wavelength PL peak observed for InGaAs QD demonstrates the maximum strain‐relaxation, thereby facilitating the formation of larger coherent QDs with higher In‐content, lower interface defects and lower optical bandgap. Moreover, formation of smoother interface during the growth of self‐assembled QDs in InGaAs‐based photodetector and solar cell would open up the possibility of narrower spectral response and enhanced light harvesting in infrared regime.

show abstract

“…On the other hand, a full-width at half-maximum (FWHM) of the InAs QDs at temperature ranging from 15 to 180 K was maintained about 40 meV. As increase the temperature above 180 K, the FWHM drastically increased with temperature due to the effect of electron-phonon scattering and thermal broadening [14]. It was considered that the fast red-shift of ground-state PL peak position and the increase of FHWM at the temperature above 180 K may be resulted from an increase in the migration rate from the small QDs with higher energy level to larger QDs with lower energy level [15].…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

Lee

Kim

et al. 2017

Appl. Sci. Converg. Technol.

View full text Add to dashboard Cite

We have reported structural and optical properties of self-assembled InAs/GaAs quantum dot (QD) grown by molecular beam epitaxy with different arsenic to indium flux ratios (V/III ratios). By increasing the V/III ratio from 9 to 160, average diameter and height of the InAs QDs decreased, but areal density of them increased. The InAs QDs grown under V/III ratio of 30 had a highest-aspect-ratio of 0.134 among them grown with other conditions. Optical property of the InAs QD was investigated by the temperature-dependent photoluminescence (PL) and integrated PL. From the temperature dependence PL measurements of InAs QDs, the activation energies of E a1 and E a2 for the InAs QDs were obtained 48 ± 3 meV and 229 ± 23 meV, respectively. It was considered that the values of E a1 and E a2 are corresponded to the energy difference between ground-state and first excited state, and the energy difference between ground-state and wetting layer, respectively.

show abstract

Photoluminescence characteristics of InAs self-assembled quantum dots in InGaAs∕GaAs quantum well

Cited by 15 publications

References 11 publications

The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

Enhanced Performance of In(Ga)As QD Based Optoelectronic Devices through Improved Interface Quality between QD and Matrix Material

Temperature Dependent Photoluminescence from InAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy

Contact Info

Product

Resources

About