Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

Sobolev, N. A.; Gusev, O. B.; Shek, E. I.; Vdovin, V. I.; Yugova, T. G.; Emel’yanov, A. M.

doi:10.1063/1.121593

Cited by 36 publications

(23 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…20 Some other studies, such as inducing super saturation of non-equilibrium self-interstitials by ion implantation forming a silicon layer in which compression stresses appeared, also shown the strong D1/D2 luminescence. 34 On the other hand, during the high temperature annealing, oxygen atoms could diffuse quickly and get gathered at dislocations in CZ silicon, 35 which is also confirmed by the FTIR results in our case. Fedina et al 33 found significant D1/D2 lines in the sample whose dislocations are caused by O þ implantation, but no DRL signals in the B þ implanted samples, even after thermal annealing.…”

Section: -supporting

confidence: 84%

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Xiang,

Li,

Jin

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

In this paper, we have investigated the room temperature dislocation-related photoluminescence of electron irradiated silicon. It is found that high temperature annealing can enhance the D1 line emission measured at room temperature. The abnormal peak shift of D1 line on the dependence of temperatures reveals the reconstruction of D1 luminescence center. It is suggested that the high temperature annealing could cause the transformation of the dislocation-point defect structure, so that the D1 luminescence is enhanced and stabilized. V

show abstract

Section: -supporting

confidence: 84%

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Xiang,

Li,

Jin

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Sobolev et al [14] find the directly measured decay time for D1 in deliberately dislocated erbium-implanted silicon is 50µs, which is close that of the fast decays in this work.…”

Section: Results and Discussion: Optical Characterisationsupporting

confidence: 61%

“…The capture cross section is proportional to the slope of this data (equation (3)) and therefore this confirms that the apparent 14 capture cross section, if it could be measured, is decreasing with fill pulse time. This is indicative of an energy state(s) becoming more repulsive to further capture as the experimental time progresses, i.e.…”

Section: Results and Discussion: Electrical Characterisationsupporting

confidence: 54%

“…The fast decay data cannot be fitted to equation 2, and therefore it is unlikely that the fast decay in this sample is due to an Auger process involving free carriers. Because of the shape of the PL spectra in Figure 2, it is suggested that the fast component is dislocation-related.Sobolev et al [14] find the directly measured decay time for D1 in deliberately dislocated erbium-implanted silicon is 50µs, which is close that of the fast decays in this work.After the PL experiments were complete, the sample was etched with the preferential etch Y3[15] in order to reveal, by optical microscopy and SEM, any crystallographic defects present. Figure 4 shows an SEM image taken from an area of the sample with the greatest fast decay amplitude at 10K, as determined by equation 1.…”

supporting

confidence: 61%

See 1 more Smart Citation

Optical and electrical activity of defects in rare earth implanted Si

Evans–Freeman

Vernon–Parry

2006

Optical Materials

View full text Add to dashboard Cite

A common technique for introducing rare earth atoms into Si and related materials for photonic applications is ion implantation. It is compatible with standard Si processing, and also allows high, non-equilibrium concentrations of rare earths to be introduced. However, the high energies often employed mean that there are collision cascades and potentially severe end-of-range damage. This paper reports on studies of this damage, and the competition it may present to the optical activity of the rare earths. Er-, Si, and Yb-implanted Si samples have been investigated, before and after anneals designed to restore the sample crystallinity. The electrical activity of defects in as-implanted Er, Si, and Yb doped Si has been studied by Deep Level Transient Spectroscopy (DTLS) and the related, high resolution technique, Laplace DLTS (LDLTS), as a function of annealing. Er-implanted Si, regrown by solid phase epitaxy at 600degrees C and then subject to a rapid thermal anneal, has also been studied by time-resolved photoluminescence (PL). The LDLTS studies reveal that there are clear differences in the defect population as a function of depth from the surface, and this is attributed to different defects in the vacancy-rich and interstitial-rich regions. Defects in the interstitial-rich region have electrical characteristics typical of small extended defects, and these may provide the precursors for larger structural defects in annealed layers. The time-resolved PL of the annealed layers, in combination with electron microscopy, shows that the Er emission at 1.54microns contains a fast component attributed to non-radiative recombination at deep states due to small dislocations.It is 2 concluded that there can be measurable competition to the radiative efficiency in rare-earth implanted Si that is due to the implantation and is not specific to Er. One of the underlying problems of using rare earth emission in Si as a host is the relative lifetimes of various parallel processes. The radiative lifetime of the Er can be many milliseconds in an insulator and is reduced by faster non-radiative recombination in Si, an effect which is increasingly prevalent as the temperature rises. A further complication arises in ion implantation, as the implantation introduces defects which can be hard to remove. The microelectronics industry currently has issues with ion implantation damage being responsible for various processing bottlenecks, for example, the phenomenon of Transient Enhanced Diffusion (TED).[5] In TED, the implanted boron atoms diffuse away from their intended location, because their interstitial-assisted diffusion is enhanced by the interstitials created during implantation. If implant-related damage remains after an anneal, it is typically seen as end-ofrange loops. Such loops are known to have associated electrical activity [6] and optical activity, [7] and therefore are of critical importance in device design and subsequent functionality. They are formed from an excess of interstitials which have been unable either to reco...

show abstract

“…Их природа окончательно не установлена до сих пор, а механизм образования центров D1 и D2 в случае деформации образцов методом четырехточечного изгиба, т. е. при достаточно низкой плотности дислокаций и достаточно низких температурах, может отличаться от механизмов, реализуемых при других методах введения дислокаций. Как показано в [12], в случаях термического отжига имплантированного кремния при высокой температуре в условиях пересыщения кремния собственными межузельными атомами [12] или эпитаксиального роста слоев SiGe на пластине Si [13] сначала образуются петли Франка, затем часть этих петель преобразуется в совершенные призматические дислокационные петли, а многократные пересечения совершенных петель приводят к образованию трехмерной цепочки с высокой плотностью чисто краевых дислокаций (pure edge dislocations), которые и связаны с линией D1. Недавно были получены экспериментальные данные, уточняющие связь линий D1 и D2 с конкретными структурными дефектами при отжиге имплантированных образцов [14].…”

unclassified

Влияние Деформации Сжатия И Растяжения На Спектр Дислокационной Люминесценции В Кремнии

Соболев¹,

Калядин²,

Feklisova³

et al. 2021

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Photoluminescence has been studied in silicon deformed by four-point bending at temperature of 600◦C. So-called dislocation-related luminescence lines D1, D2, D3 and D4 are observed from both the sides of the deformed samples. It is found that in the samples with the induced dislocation density ~10^7 cm^−2, a luminescence intensity of the D3 and D4 lines is the same on both the sample sides, and the intensity of the D1 and D2 lines from the tensile side is higher than that from the compressive side. Behavior of the intensity of the D1 and D2 lines is well correlated with a quantity of dislocation trails. Possible reasons of observed effect are discussed.

show abstract

Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

Cited by 36 publications

References 12 publications

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

Optical and electrical activity of defects in rare earth implanted Si

Влияние Деформации Сжатия И Растяжения На Спектр Дислокационной Люминесценции В Кремнии

Contact Info

Product

Resources

About