Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

Bergman, Leah; Dutta, Mitra; Stroscio, Michael A.; Komirenko, S. M.; Nemanich, R. J.; Eiting, C. J.; Lambert, Damien; Kwon, Ho Ki; Dupuis, R. D.

doi:10.1063/1.126225

Cited by 46 publications

(13 citation statements)

References 18 publications

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“…4(c)). In this so called "S-shape" behavior, 44,[72][73][74][75] the initial red shift of PL peak is usually understood as a redistribution (optimization) of the distribution of the excitons, which acquire enough thermal energy to leave their potential minima to find a lower energy state further afield. This behavior is correctly reproduced by the hopping model (see Supporting Information which is a factor of three larger than the observed onset temperature of ∼ 30 K. In fact, such a significant blue shift between 25 K and 50 K is difficult to explain only based on carrier redistribution or activation to free states.…”

Section: Resultsmentioning

confidence: 99%

Static and Dynamic Disorder in Triple-Cation Hybrid Perovskites

et al. 2018

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A detailed understanding of the carrier dynamics and emission characteristics of organic-inorganic lead halide perovskites is critical for their optoelectronic and energy harvesting applications. In this work, we reveal the impact of the crystal lattice disorder on the photo-generated electron-hole pairs through low-temperature photoluminescence measurements. We provide strong evidence that the intrinsic disorder forms a sub-bandgap tail density of states, which determines the emission properties at low temperature. The PL spectra indicate that the disorder evolves with increasing temperature, changing its character from static to dynamic. This change is accompanied by a rapid drop of the PL efficiency, originating from the increased mobility of excitons/polarons, which enables them to reach deep non-radiative recombination centers more easily.

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Section: Resultsmentioning

confidence: 99%

Static and Dynamic Disorder in Triple-Cation Hybrid Perovskites

et al. 2018

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“…The temperature dependence of the band gap as given by the behavior of the MQW absorption in the PLE spectra is well described by Varshni's formula [13] (gray line). The anomalous temperature-induced shift of the emission energy is attributed to localization-induced tail states in the density of states [14,15]. Between 4 and 100 K a redshift appears, because on one hand the excitons gain sufficient thermal energy to overcome small potential barriers and become trapped in adjacent lower-energy levels before they recombine.…”

Section: Optical Properties Of Gaasn and Ingaasnmentioning

confidence: 99%

Localization effects in InGaAsN multi-quantum well structures

Hoffmann

Heitz

Kaschner

et al. 2002

Materials Science and Engineering: B

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The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 mm laser development is overviewed. #

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“…Then the bandgap follows a classical redshift. A model which has been proposed by Bergman et al 23 is used in order to explain the blue temperature-induced shift in strained Si luminescence. The model is based on band-tail filling of a Gaussian DOS with a standard deviation parameter r which describes the dispersion of density of states (i.e., its width) and E D (T) is attributed to the energy range between the center of the Gaussian DOS of the electrons and that of the holes.…”

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confidence: 99%

Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer

Munguía

Bluet

Marty

et al. 2012

Applied Physics Letters

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Photoluminescence spectroscopy is applied on tensely strained silicon on insulator layer in order to evaluate the temperature dependence of the indirect energy bandgap. The strained silicon indirect bandgap follows a similar behaviour to bulk silicon at high temperature (from 80 K up to 300 K) which was described from the Varshni [Physica 34, 149 (1967)] and Bose-Einstein equations. Nevertheless, at low temperature (from 9 K to 80 K), an unusual blueshift of the bandgap is evidenced. The latter can be modelled considering band-tail states of density of states which are related to the strain fluctuation.

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Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

Abstract: Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In 0.02 Ga 0.98 N active layer

Cited by 46 publications

References 18 publications

Static and Dynamic Disorder in Triple-Cation Hybrid Perovskites

Static and Dynamic Disorder in Triple-Cation Hybrid Perovskites

Localization effects in InGaAsN multi-quantum well structures

Temperature dependence of the indirect bandgap in ultrathin strained silicon on insulator layer

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